D
D. K. Sadana
Researcher at IBM
Publications - 104
Citations - 1978
D. K. Sadana is an academic researcher from IBM. The author has contributed to research in topics: MOSFET & Silicon. The author has an hindex of 27, co-authored 104 publications receiving 1891 citations.
Papers
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Journal ArticleDOI
High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High- $\kappa$ Gate Dielectrics and $\alpha$ -Si Passivation
Yuan-Chen Sun,Edward W. Kiewra,J. P. de Souza,J.J. Bucchignano,Keith E. Fogel,D. K. Sadana,Ghavam G. Shahidi +6 more
TL;DR: In this article, both short and long buried-channel In0.7Ga0.3As MOSFETs with and without alpha-Si passivation are demonstrated.
Journal ArticleDOI
High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology
Davood Shahrjerdi,Stephen W. Bedell,Chris Ebert,Can Bayram,Bahman Hekmatshoar,K. Fogel,Paul A. Lauro,M. Gaynes,Tayfun Gokmen,John A. Ott,D. K. Sadana +10 more
TL;DR: In this paper, the authors demonstrate the effectiveness of the controlled spalling technology for producing high efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem solar cells.
Journal ArticleDOI
Inversion mode n-channel GaAs field effect transistor with high-k/metal gate
J. P. de Souza,Edward W. Kiewra,Yuan-Chen Sun,Alessandro C. Callegari,D. K. Sadana,Ghavam G. Shahidi,David J. Webb,J. Fompeyrine,Roland Germann,C. Rossel,Chiara Marchiori +10 more
TL;DR: In this paper, a thin amorphous Si (a-Si) cap was used to passivate metal-oxide-semiconductor field effect transistors (MOSFETs).
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Strain scaling for CMOS
TL;DR: In this paper, the authors describe various techniques for applying strain to current and future complementary metal-oxide-semiconductor (CMOS) channels to boost CMOS performance and make a case that the future scalable strain platform will require a combination of biaxial strain at wafer level in conjunction with local uniaxially strain.
Journal ArticleDOI
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
N. Daix,Emanuele Uccelli,Lukas Czornomaz,Daniele Caimi,C. Rossel,Marilyne Sousa,Heinz Siegwart,Chiara Marchiori,J. M. Hartmann,K.-T. Shiu,Cheng-Wei Cheng,Mahadevaiyer Krishnan,M. Lofaro,M. Kobayashi,D. K. Sadana,Jean Fompeyrine +15 more
TL;DR: In this article, the first demonstration of 200 mm InGaAs-on-insulator (InGaAso-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer was reported.