Journal ArticleDOI
Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies
K. D. Mynbaev,K. D. Mynbaev,N. L. Bazhenov,S. A. Dvoretsky,N. N. Mikhailov,V. S. Varavin,D. V. Marin,M. V. Yakushev +7 more
TLDR
In this article, the defect structure of HgCdTe/GaAs films was investigated by performing variable-temperature photoluminescence (PL) measurements. And the post-growth annealing was found to have a positive effect on the defect structures by reducing the full-widths at half-maximum of excitonic PL lines for both types of films and lowering the concentration of defects specific to HgcdTe and Si.Abstract:
Properties of HgCdTe films grown by molecular beam epitaxy on GaAs and Si substrates have been studied by performing variable-temperature photoluminescence (PL) measurements. A substantial difference in defect structure between films grown on GaAs (013) and Si (013) substrates was revealed. HgCdTe/GaAs films were mostly free of defect-related energy levels within the bandgap, which was confirmed by PL and carrier lifetime measurements. By contrast, the properties of HgCdTe/Si films are affected by uncontrolled point defects. These could not be always associated with typical “intrinsic” HgCdTe defects, such as mercury vacancies, so consideration of other defects, possibly inherent in HgCdTe/Si structures, was required. The post-growth annealing was found to have a positive effect on the defect structure by reducing the full-widths at half-maximum of excitonic PL lines for both types of films and lowering the concentration of defects specific to HgCdTe/Si.read more
Citations
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Journal ArticleDOI
Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations
V. S. Krivobok,S. I. Chentsov,S. N. Nikolaev,M. A. Chernopitssky,E. E. Onishchenko,A. A. Pruchkina,V. P. Martovitskiy,V. S. Bagaev,D. G. Ikusov,D. V. Marin,N. N. Mikhailov,M. V. Yakushev +11 more
TL;DR: In this paper, it was shown that, at helium temperatures, relaxed CdTe films reveal isolated emitters, the properties of which indicate their relation with a weakly perturbed fragment of the Shockley dislocation core.
Journal ArticleDOI
Optical Studies of Molecular-Beam Epitaxy-Grown Hg 1−x Cd x Te with x = 0.7–0.8
TL;DR: In this article, optical transmission, photoluminescence and photoconductivity were used to study Hg1−xCdxTe with x = 0.7-0.8 (bandgap 0.8-1.1 ) at 300 K. The studied material, which included layers used as spacers and barriers in potential and quantum-well structures, showed a considerable degree of alloy disorder similar to narrower-bandgap HgCdTe grown by the same method.
Journal ArticleDOI
Strong Disorder in HgCdTe Studied with Optical Methods and X-Ray Diffraction
D. A. Andryushchenko,I. N. Trapeznikova,N. L. Bazhenov,M. A. Yagovkina,K. D. Mynbaev,V. G. Remesnik,V. S. Varavin +6 more
Journal ArticleDOI
An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions
V. I. Ivanov-Omskii,K. D. Mynbaev,I. N. Trapeznikova,D. A. Andryushchenko,N. L. Bazhenov,Nikolay N. Mikhailov,V. S. Varavin,V. G. Remesnik,S. A. Dvoretskii,M. V. Yakushev +9 more
TL;DR: In this paper, the effect of a fundamental decrease in the disordering scale under thermal annealing and possible interplay of the observed phenomena with defects typical of films grown by molecular beam epitaxy are discussed.
References
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Journal ArticleDOI
Progress, challenges, and opportunities for HgCdTe infrared materials and detectors
Abstract: This article presents a review on the current status, challenges, and potential future development opportunities for HgCdTe infrared materials and detectortechnology. A brief history of HgCdTe infrared technology is firstly summarized and discussed, leading to the conclusion that HgCdTe-based infrared detectors will continue to be a core infrared technology with expanded capabilities in the future due to a unique combination of its favourable properties. Recent progress and the current status of HgCdTe infrared technology are reviewed, including material growth,device architecture, device processing, surface passivation, and focal plane array applications. The further development of infrared applications requires that future infrared detectors have the features of lower cost, smaller pixel size, larger array format size, higher operating temperature, and multi-band detection, which presents a number of serious challenges to current HgCdTe-based infrared technology. The primary challenges include well controlled p-type doping, lower cost, larger array format size, higher operating temperature, multi-band detection, and advanced plasma dry etching. Various new concepts and technologies are proposed and discussed that have the potential to overcome the existing primary challenges that are inhibiting the development of next generation HgCdTeinfrared detectortechnology.
Journal ArticleDOI
New concepts in infrared photodetector designs
TL;DR: New strategies in photodetector designs are reviewed, including barrier detectors, unipolar barrier photodiodes, multistage detectors and trapping detectors, some of these new solutions have emerged as a real competitor to HgCdTePhotodetectors.
Journal ArticleDOI
Minority carrier lifetime in p-HgCdTe
TL;DR: In this paper, the minority carrier lifetime in midwave infrared (MWIR) and long wave infrared (LWIR) HgCdTe was compared to current theories of Auger 7, radiative, and Shockley-Read recombination in this material.
Journal ArticleDOI
The Future of Infrared; III–Vs or HgCdTe?
TL;DR: In this article, the performance requirements of such systems with regard to both optical and detector limitations are examined for the materials technologies and device architectures that are in vogue today, and the possibility for extending the operation of mid and long-wavelength focal plane arrays to room temperature with diffraction and background-limited performance is discussed, together with the potential issues that must be addressed in order to achieve this ultimate goal.
Journal ArticleDOI
HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements
O. Gravrand,J. Rothman,C. Cervera,N. Baier,C. Lobre,J. P. Zanatta,O. Boulade,V. Moreau,Bruno Fièque +8 more
TL;DR: In this paper, the authors review the latest achievements obtained on this matter at DEFIR (LETI and Sofradir common laboratory) from the short-wave infrared (SWIR) band detection for classical astronomical needs, to long-warping infrared (LWIR) bands for exoplanet transit spectroscopy, up to very long-wavelength infrared (VLWIR).