Daniel J. Lichtenwalner

TL;DR: In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.

TL;DR: In this article, the authors investigated the interface passivation materials for metal-oxide-semiconductor field effect transistors (MOSFETs) on 4H-SiC (0001).

TL;DR: In this article, the authors show that the boundary between leakage current degradation and a single event-burnout-like effect is a strong function of linear energy transfer and reverse bias, consistent with the hypothesis that ion energy causes eutectic-like intermixture at the metal-semiconductor interface or localized melting of the silicon carbide lattice.

TL;DR: Results demonstrate the reliability of SiC MOSFETs under high-field operation and the device failure rate due to terrestrial neutron single-event burnout (SEB) is shown to be comparable or superior to that of Si devices.

TL;DR: In this article, the wear-out mechanisms and intrinsic reliability performance of power SiC devices as characterized by time-dependent dielectric breakdown (TDDB), accelerated life test high temperature reverse bias (ALT-HTRB), terrestrial neutron exposure, and power cycling are discussed.