Proceedings ArticleDOI
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
John W. Palmour,Lin Cheng,Vipindas Pala,Edward Van Brunt,Daniel J. Lichtenwalner,Gangyao Wang,Jim Richmond,Michael J. O'Loughlin,Sei-Hyung Ryu,Scott Allen,Albert A. Burk,Charles Scozzie +11 more
- pp 79-82
TLDR
In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.Abstract:
Since Cree, Inc.'s 2
nd
generation 4H-SiC MOSFETs were commercially released with a specific on-resistance (R
ON, SP
) of 5 mΩ·cm
2
for a 1200 V-rating in early 2013, we have further optimized the device design and fabrication processes as well as greatly expanded the voltage ratings from 900 V up to 15 kV for a much wider range of high-power, high-frequency, and high-voltage energy-conversion and transmission applications. Using these next-generation SiC MOSFETs, we have now achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV with a R
ON, SP
as low as 2.3 mΩ·cm
2
for a breakdown voltage (BV) of 1230 V and 900 V-rating, 2.7 mΩ·cm
2
for a BV of 1620 V and 1200 V-rating, 3.38 mΩ·cm
2
for a BV of 1830 V and 1700 V-rating, 10.6 mΩ·cm
2
for a BV of 4160 V and 3300 V-rating, 123 mΩ·cm
2
for a BV of 12 kV and 10 kV-rating, and 208 mΩ·cm
2
for a BV of 15.5 kV and 15 kV-rating. In addition, due to the lack of current tailing during the bipolar device switching turn-off, the SiC MOSFETs reported in this work exhibit incredibly high frequency switching performance over their silicon counter parts.read more
Citations
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Journal ArticleDOI
Silicon carbide: A unique platform for metal-oxide-semiconductor physics
Gang Liu,Blair Tuttle,Sarit Dhar +2 more
TL;DR: In this paper, the authors reviewed the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport in 4H-SiC power metal oxide Semiconductor Field Effect Transistors.
Journal ArticleDOI
Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules
TL;DR: In this paper, a state-of-the-art 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability.
Journal ArticleDOI
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
Ajay Kumar Morya,Matthew C. Gardner,Bahareh Anvari,Liming Liu,Alejandro G. Yepes,Jesus Doval-Gandoy,Hamid A. Toliyat +6 more
TL;DR: The problems of high common mode currents and bearing and insulation damage, which are caused by high dv/dt, and the reliability of WBG devices are discussed.
Journal ArticleDOI
Modeling and Analysis of SiC MOSFET Switching Oscillations
TL;DR: In this article, equivalent circuit models incorporating all parasitic elements are developed for the turn-ON and turn-OFF of a SiC MOSFET, and simple mathematical formulas are derived to provide the theoretical analysis of the switching oscillation phenomenon, and to guide the snubber or damping circuit design.
Journal ArticleDOI
Overview of high voltage sic power semiconductor devices: development and application
Shiqi Ji,Zheyu Zhang,Fred Wang +2 more
TL;DR: In this paper, the development and status of high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much attention in recent years, and the technologies and challenges for HV SiC device application in converter design are discussed.
References
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Proceedings ArticleDOI
10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation
David Grider,Mrinal K. Das,Anant K. Agarwal,John W. Palmour,Scott Leslie,John Ostop,Ravisekhar Nadimpalli Raju,Michael Joseph Schutten,Al Hefner +8 more
TL;DR: In this paper, the extension of SiC power technology to higher voltage 10 kV/10 A SiC DMOSFETs and SiC JBS diodes is discussed.
Journal ArticleDOI
High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs
Lin Cheng,Sei Hyung Ryu,Anant K. Agarwal,Michael J. O'Loughlin,Albert A. Burk,Jim Richmond,Aivars J. Lelis,Charles Scozzie,John W. Palmour +8 more
TL;DR: In this article, the authors investigated the thermal behavior of the recently developed 1200 V, 200 A 4H-SiC power DMOSFETs operating from 20°C up to 300°C.