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Daniel J. Lichtenwalner
Researcher at Research Triangle Park
Publications - 37
Citations - 738
Daniel J. Lichtenwalner is an academic researcher from Research Triangle Park. The author has contributed to research in topics: Power semiconductor device & Gate oxide. The author has an hindex of 12, co-authored 37 publications receiving 585 citations. Previous affiliations of Daniel J. Lichtenwalner include Cree Inc. & Durham University.
Papers
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Proceedings ArticleDOI
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
John W. Palmour,Lin Cheng,Vipindas Pala,Edward Van Brunt,Daniel J. Lichtenwalner,Gangyao Wang,Jim Richmond,Michael J. O'Loughlin,Sei-Hyung Ryu,Scott Allen,Albert A. Burk,Charles Scozzie +11 more
TL;DR: In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.
Journal ArticleDOI
High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers
TL;DR: In this article, the authors investigated the interface passivation materials for metal-oxide-semiconductor field effect transistors (MOSFETs) on 4H-SiC (0001).
Journal ArticleDOI
Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
A. F. Witulski,Robert R. Arslanbekov,Ashok Raman,Ronald D. Schrimpf,Andrew L. Sternberg,Kenneth F. Galloway,Arto Javanainen,David Grider,Daniel J. Lichtenwalner,Brett Hull +9 more
TL;DR: In this article, the authors show that the boundary between leakage current degradation and a single event-burnout-like effect is a strong function of linear energy transfer and reverse bias, consistent with the hypothesis that ion energy causes eutectic-like intermixture at the metal-semiconductor interface or localized melting of the silicon carbide lattice.
Proceedings ArticleDOI
Reliability studies of SiC vertical power MOSFETs
Daniel J. Lichtenwalner,Brett Hull,Edward Van Brunt,Shadi Sabri,Donald A. Gajewski,Dave Grider,Scott H. Allen,John W. Palmour,Akin Akturk,J.M. McGarrity +9 more
TL;DR: Results demonstrate the reliability of SiC MOSFETs under high-field operation and the device failure rate due to terrestrial neutron single-event burnout (SEB) is shown to be comparable or superior to that of Si devices.
Proceedings ArticleDOI
SiC power device reliability
Donald A. Gajewski,Brett Hull,Daniel J. Lichtenwalner,Sei-Hyung Ryu,Eric Bonelli,Habib Mustain,Gangyao Wang,S.T. Allen,John W. Palmour +8 more
TL;DR: In this article, the wear-out mechanisms and intrinsic reliability performance of power SiC devices as characterized by time-dependent dielectric breakdown (TDDB), accelerated life test high temperature reverse bias (ALT-HTRB), terrestrial neutron exposure, and power cycling are discussed.