Showing papers by "David J. Srolovitz published in 2020"

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications.

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDCs) and graphene compose a new family of crystalline materials with atomic thicknesses and exotic mechanical, electronic, and optical properties. Due to their inherent exceptional mechanical flexibility and strength, these 2D materials provide an ideal platform for strain engineering, enabling versatile modulation and significant enhancement of their optical properties. For instance, recent theoretical and experimental investigations have demonstrated flexible control over their electronic states via application of external strains, such as uniaxial strain and biaxial strain. Meanwhile, many nondestructive optical measurement methods, typically including absorption, reflectance, photoluminescence, and Raman spectroscopies, can be readily exploited to quantitatively determine strain-engineered optical properties. This review begins with an introduction to the macroscopic theory of crystal elasticity and microscopic effective low-energy Hamiltonians coupled with strain fields, and then summarizes recent advances in strain-induced optical responses of 2D TMDCs and graphene, followed by the strain engineering techniques. It concludes with exciting applications associated with strained 2D materials, discussions on existing open questions, and an outlook on this intriguing emerging field.

Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene.

Abstract: The properties of van der Waals (vdW) materials often vary dramatically with the atomic stacking order between layers, but this order can be difficult to control. Trilayer graphene (TLG) stacks in either a semimetallic ABA or a semiconducting ABC configuration with a gate-tunable band gap, but the latter has only been produced by exfoliation. Here we present a chemical vapor deposition approach to TLG growth that yields greatly enhanced fraction and size of ABC domains. The key insight is that substrate curvature can stabilize ABC domains. Controllable ABC yields ~59% were achieved by tailoring substrate curvature levels. ABC fractions remained high after transfer to device substrates, as confirmed by transport measurements revealing the expected tunable ABC band gap. Substrate topography engineering provides a path to large-scale synthesis of epitaxial ABC-TLG and other vdW materials.

The grain boundary mobility tensor.

Abstract: The grain-boundary (GB) mobility relates the GB velocity to the driving force. While the GB velocity is normally associated with motion of the GB normal to the GB plane, there is often a tangential motion of one grain with respect to the other across a GB; i.e., the GB velocity is a vector. GB motion can be driven by a jump in chemical potential across a GB or by shear applied parallel to the GB plane; the driving force has three components. Hence, the GB mobility must be a tensor (the off-diagonal components indicate shear coupling). Performing molecular dynamics (MD) simulations on a symmetric-tilt GB in copper, we demonstrate that all six components of the GB mobility tensor are nonzero (the mobility tensor is symmetric, as required by Onsager). We demonstrate that some of these mobility components increase with temperature, while, surprisingly, others decrease. We develop a disconnection dynamics-based statistical model that suggests that GB mobilities follow an Arrhenius relation with respect to temperature T below a critical temperature [Formula: see text] and decrease as [Formula: see text] above it. [Formula: see text] is related to the operative disconnection mode(s) and its (their) energetics. For any GB, which disconnection modes dominate depends on the nature of the driving force and the mobility component of interest. Finally, we examine the impact of the generalization of the mobility for applications in classical capillarity-driven grain growth. We demonstrate that stress generation during GB migration (shear coupling) necessarily slows grain growth and reduces GB mobility in polycrystals.

Grain-boundary topological phase transitions.

Abstract: The formation and migration of disconnections (line defects constrained to the grain boundary [GB] plane with both dislocation and step character) control many of the kinetic and dynamical properties of GBs and the polycrystalline materials of which they are central constituents. We demonstrate that GBs undergo a finite-temperature topological phase transition of the Kosterlitz-Thouless (KT) type. This phase transition corresponds to the screening of long-range interactions between (and unbinding of) disconnections. This phase transition leads to abrupt changes in the behavior of GB migration, GB sliding, and roughening. We analyze this KT transition through mean-field theory, renormalization group theory, and kinetic Monte Carlo simulations and examine how this transition affects microstructure-scale phenomena such as grain growth stagnation, abnormal grain growth, and superplasticity.

From ion to atom to dendrite: Formation and nanomechanical behavior of electrodeposited lithium

Abstract: Development of high energy density solid-state batteries with Li metal anodes has been limited by uncontrollable growth of Li dendrites in liquid and solid electrolytes (SEs). This, in part, may be caused by a dearth of information about mechanical properties of Li, especially at the nano- and microlength scales and microstructures relevant to Li batteries. We investigate Li electrodeposited in a commercial LiCoO2/LiPON/Cu solid-state thin-film cell, grown in situ in a scanning electron microscope equipped with nanomechanical capabilities. Experiments demonstrate that Li was preferentially deposited at the LiPON/Cu interface along the valleys that mimic the domain boundaries of underlying LiCoO2 (cathode). Cryogenic electron microscopy analysis of electrodeposited Li revealed a single-crystalline microstructure, and in situ nanocompression experiments on nano-pillars with 360–759 nm diameters revealed their average Young’s modulus to be 6.76 ± 2.88 GPa with an average yield stress of 16.0 ± 6.82 MPa, ~24x higher than what has been reported for bulk polycrystalline Li. We discuss mechanical deformation mechanisms, stiffness, and strength of nano-sized electrodeposited Li in the framework of its microstructure and dislocation-governed nanoscale plasticity of crystals, and place it in the parameter space of existing knowledge on small-scale Li mechanics. The enhanced strength of Li at small scales may explain why it can penetrate and fracture through much stiffer and harder SEs than theoretically predicted.

Grain Boundary Triple Junction Dynamics: A Continuum Disconnection Model

Abstract: The microstructure of polycrystalline materials consists of networks of grain boundaries (GBs) and triple junctions (TJs), along which three GBs meet. The evolution of such microstructures may be d...

Distribution of Topological Types in Grain-Growth Microstructures.

Abstract: An open question in studying normal grain growth concerns the asymptotic state to which microstructures converge. In particular, the distribution of grain topologies is unknown. We introduce a thermodynamiclike theory to explain these distributions in two- and three-dimensional systems. In particular, a bendinglike energy E_{i} is associated to each grain topology t_{i}, and the probability of observing that particular topology is proportional to [1/s(t_{i})]e^{-βE_{i}}, where s(t_{i}) is the order of an associated symmetry group and β is a thermodynamiclike constant. We explain the physical origins of this approach and provide numerical evidence in support.

Composition-induced type I and direct bandgap transition metal dichalcogenides alloy vertical heterojunctions.

Abstract: While members of the 2D semiconducting transition metal dichalcogenide (TMD) family MX2 (M = {Mo, W}, X = {S, Se}) are promising for device applications, stacked layer (vertical) heterojunctions exhibit features that make them inappropriate for light-emitting applications. Such vertical heterojunctions exhibit type II, rather than the preferred type I band alignment. Using density functional theory calculations, we identify the pseudo-binary and quaternary alloy composition range for which band alignment is type I. While broad regions of composition space lead to type I band alignment, most light-emitting devices require direct bandgaps. We demonstrate that by taking advantage of alloying and/or twisting between layers, a wide range of type I, direct bandgap stacked layer (vertical) heterojunctions are achievable. These results and the underlying method developed here provide new opportunities for TMD vertical heterojunction device optimization and opens the door to new classes of TMD vertical heterojunction device applications.

Power-law scaling for solid-state dewetting of thin films: an Onsager variational approach

Abstract: We examine the kinetics of surface diffusion-controlled, solid-state dewetting by consideration of the retraction of the contact in a semi-infinite solid thin film on a flat rigid substrate. The analysis is performed within the framework of the Onsager variational principle applied to surface diffusion-controlled morphology evolution. Based on this approach, we derive a simple, reduced-order model to quantitatively analyse the power-law scaling of the dewetting process. Using asymptotic analysis and numerical simulations for the reduced-order model, we find that the retraction distance grows as the $2/5$ power of time and the height of the ridge, adjacent to the contact, grows as the $1/5$ power of time for late time. While the asymptotic analysis focuses on late time and a relatively simple geometric model, the Onsager approach is applicable to all times and descriptions of the morphology of arbitrary complexity.