The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

Organizational Citizenship Behaviors: A Critical Review of the Theoretical and Empirical Literature and Suggestions for Future Research

We test the relationship between shareholder value, stakeholder management, and social issue participation. Building better relations with primary stakeholders like employees, customers, suppliers, and communities could lead to increased shareholder wealth by helping firms develop intangible, valuable assets which can be sources of competitive advantage. On the other hand, using corporate resources for social issues not related to primary stakeholders may not create value for shareholders. We test these propositions with data from S&P 500 firms and find evidence that stakeholder management leads to improved shareholder value, while social issue participation is negatively associated with shareholder value. Copyright © 2001 John Wiley & Sons, Ltd.

http://faculty.wwu.edu/dunnc3/rprnts.shareholdervaluesocialissues.pdf

Shareholder value, stakeholder management, and social issues: what's the bottom line?

In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes of the unintentional n-type conductivity, emphasize the role of impurities, critically review the current status of p-type doping and address possible routes to controlling the electrical conductivity in ZnO. Finally, we discuss band-gap engineering using MgZnO and CdZnO alloys.

/pdf/fundamentals-of-zinc-oxide-as-a-semiconductor-1s4l8bh009.pdf

Fundamentals of zinc oxide as a semiconductor

Alignment: cómo alinear la Organización a la Estrategia a través del Balanced Scorecard

The effect of annealing on the stability of Ti/Au ohmic contacts on heavily Al-doped (n ≈ 10 19 cm -3 ) n-ZnO is reported. Due to the high n-type doping levels in the ZnO, the as-deposited contacts are ohmic with an excellent specific contact resistivity of 2.4 × 10 -7 Ω cm 2 . Subsequent annealing produces a minimum value of 6 × 10 -8 Ω cm 2 after processing at 300°C. The absence of any temperature dependence to the contact resistance indicates that tunneling is the dominant current transport mechanism. Annealing the contact structure at 250°C produces Zn outdiffusion through the Ti/Au, intermixing of Au and Ti, and roughening of the contact surface morphology. The ease of ohmic contact formation to the Al-doped ZnO and extremely low contact resistance achievable even with low-temperature processing makes this metallization scheme attractive in applications where high processing temperatures cannot be employed.

Ti ∕ Au Ohmic Contacts to Al-Doped n-ZnO Grown by Pulsed Laser Deposition

Indium zinc oxide (IZO)-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect oxygen gas. Amorphous IZO films with high carrier concentration of 1021 cm−3 were deposited on the gate region of the HEMTs by cosputtering from ZnO and In2O3 targets. The changes in IZO gated-AlGaN/GaN HEMT drain current were used to monitor the presence of oxygen. The IZO gated AlGaN/GaN HEMT sensors were tested with O2 at room temperature, 50 °C, and 120 °C. There was no response to O2 at room temperature. At 50 °C, the sensors could sense O2 but gradually saturated. The sensor showed a strong response to the oxygen gas at 120 °C, which is a much lower temperature than with conventional oxide-based oxygen sensors that typically operate in the range of 400–700 °C. This enhanced oxygen sensing sensitivity was due to the amplification effect of the AlGaN/GaN HEMT. A preannealing step at 350 °C was also found to improve the sensitivity and response time of O2 sensing at 120 °C.

Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors

Properties of Zn3N2-doped ZnO films deposited by pulsed laser deposition

High-quality ZnO film growth on sapphire was achieved by pulsed laser deposition using a high temperature deposited ZnO buffer layer. This high temperature deposited buffer layer remarkably improves crystallinity of subsequent films. In particular, the full width at half-maximum of X-ray diffraction ω-rocking curves for ZnO films grown with the buffer layer is 0.0076° (27.36 arcsec) and 0.1242° (447.12 arcsec) for the out-of-plane (002) and in-plane (102) reflections, respectively. In addition, ZnO films grown with this buffer layer showed a carrier mobility of 88 cm2/V s, which is three times higher than that realized for ZnO films grown without the buffer layer. The room temperature photoluminescence spectra showed strong band edge emission with little or no defect-related visible emission.

David P. Norton

Papers

Alignment: cómo alinear la Organización a la Estrategia a través del Balanced Scorecard

Ti ∕ Au Ohmic Contacts to Al-Doped n-ZnO Grown by Pulsed Laser Deposition

Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors

Properties of Zn3N2-doped ZnO films deposited by pulsed laser deposition

Pulsed laser deposition of high-quality ZnO films using a high temperature deposited ZnO buffer layer