David P. Norton

TL;DR: In this paper, the authors summarize recent progress in dilute magnetic semiconductors such as (Ga,Mn)N,(Ga,mn)P and (Zn,mns)O exhibiting room temperature ferromagnetism, and its potential applications in novel devices such as spin-polarized light emitters and spin field effect transistors.

TL;DR: In this article, the authors proposed a transparent, flexible or wearable electronics using non-Si materials deposited at low temperature on cheap substrates, such as TFTs, which have some drawbacks such as light sensitivity and light degradation and low field effect mobility.

TL;DR: In this article, the electrical characteristics and persistentconductivity effects in MgZnO:P alloys grown by the method of pulsed laser deposition on undoped n-ZnOs substrates are systematically investigated.

Abstract: The effect of cryogenic temperatures during metal deposition on the contact properties of Pd, Pt, Ti, and Ni on bulk single-crystal n-type ZnO has been investigated. Deposition at both room and low temperature produced contacts with Ohmic characteristics for Ti and Ni metallizations. By sharp contrast, both Pd and Pt contacts showed rectifying characteristics after deposition with barrier heights between 0.37 eV and 0.69 eV. Changes in contact behavior were measured on Pd to anneal temperatures of ∼300 °C, showing an increase in barrier height along with a decrease in ideality factor with increasing annealing temperature. This difference with annealing temperature is in sharp contrast to previous results for Au contacts to ZnO. There were no differences in near-surface stoichiometry for the different deposition temperatures; however, low temperature contacts demonstrated some peeling/cracking for Pt and Pd.