D
David P. Norton
Researcher at University of Florida
Publications - 549
Citations - 67855
David P. Norton is an academic researcher from University of Florida. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 92, co-authored 549 publications receiving 66007 citations. Previous affiliations of David P. Norton include Harvard University & Louisiana State University.
Papers
More filters
Journal ArticleDOI
Comparative study of HfNx and Hf–Ge–N copper diffusion barriers on Ge
TL;DR: The diffusion barrier properties of HfNx and Hf-Ge-N thin films for Cu metallization on Ge are examined in this paper, where the diffusion barrier films were deposited by reactive sputtering on p-Ge (001) single crystal substrates with varying thicknesses.
Journal ArticleDOI
Detection of C 2 H 4 Using Wide-Bandgap Semiconductor Sensors AlGaN/GaN MOS Diodes and Bulk ZnO Schottky Rectifiers
B. S. Kang,Suku Kim,Fan Ren,Kelly P. Ip,Young-Woo Heo,Brent P. Gila,C. R. Abernathy,David P. Norton,Stephen J. Pearton +8 more
TL;DR: In this article, the characteristics of SC 2 O 3 /AIGaN/GaN metal-oxide semiconductor (MOS) diodes and Pt/ZnO Schottky Diodes as detectors of C 2 H 4 are reported.
Journal ArticleDOI
Microstructure of pulsed laser deposited YBa2Cu3O7−δ films on yttria-stabilized zirconia/CeO2 buffered biaxially textured Ni substrates
Chau-Yun Yang,Susan E. Babcock,Ataru Ichinose,Amit Goyal,D. M. Kroeger,Dominic F. Lee,F.A. List,David P. Norton,J. E. Mathis,Mariappan Parans Paranthaman,Chan Park +10 more
TL;DR: In this article, the microstructure of pulsed laser deposited YBa 2 Cu 3 O 7− δ (YBCO) layers on four different biaxially textured Ni-substrates with epitaxial oxide buffer layers was studied.
Journal ArticleDOI
Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors
Wantae Lim,Jung Hun Jang,S.-H. Kim,David P. Norton,Valentin Craciun,S. J. Pearton,Fan Ren,H. Chen +7 more
TL;DR: In this article, the performance of amorphous InGaZnO4 thin film transistors with three different gate dielectrics (SiO2, SiON, and SiNx) is reported.
Journal ArticleDOI
Migration and luminescence enhancement effects of deuterium in ZnO∕ZnCdO quantum wells
W.T. Lim,David P. Norton,Stephen J. Pearton,Xingjun Wang,Weimin Chen,Irina Buyanova,Andrei Osinsky,J. W. Dong,B. Hertog,A. V. Thompson,Winston V. Schoenfeld,Yu-Lin Wang,Fan Ren +12 more
TL;DR: In this paper, the photoluminescence (PL) intensity from the samples was increased by factors of 5 at 5K and ∼20 at 300K as a result of deuteration, most likely due to passivation of competing nonradiative centers.