The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

Organizational Citizenship Behaviors: A Critical Review of the Theoretical and Empirical Literature and Suggestions for Future Research

We test the relationship between shareholder value, stakeholder management, and social issue participation. Building better relations with primary stakeholders like employees, customers, suppliers, and communities could lead to increased shareholder wealth by helping firms develop intangible, valuable assets which can be sources of competitive advantage. On the other hand, using corporate resources for social issues not related to primary stakeholders may not create value for shareholders. We test these propositions with data from S&P 500 firms and find evidence that stakeholder management leads to improved shareholder value, while social issue participation is negatively associated with shareholder value. Copyright © 2001 John Wiley & Sons, Ltd.

http://faculty.wwu.edu/dunnc3/rprnts.shareholdervaluesocialissues.pdf

Shareholder value, stakeholder management, and social issues: what's the bottom line?

In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes of the unintentional n-type conductivity, emphasize the role of impurities, critically review the current status of p-type doping and address possible routes to controlling the electrical conductivity in ZnO. Finally, we discuss band-gap engineering using MgZnO and CdZnO alloys.

/pdf/fundamentals-of-zinc-oxide-as-a-semiconductor-1s4l8bh009.pdf

Fundamentals of zinc oxide as a semiconductor

Kaplan und Norton sind die Vater der Balanced Business Scorecard. Dabei handelt es sich um eine neue Methode zur Leistungsmessung, die es den Unternehmen ermoglicht, nichtfinanzielle ebenso wie finanzielle Ergebnisse zu messen. Sie berucksichtigt auch „weiche“, jedoch wichtige Faktoren wie Kundenzufriedenheit, Qualitat, Produktzykluszeiten und Effektivitat bei der Entwicklung neuer Produkte.

Leistungsmessung mit der Balanced Scorecard

ZnO is an attractive candidate for spintronics studies because of its potential for exhibiting high Curie temperatures and the relative lack of ferromagnetic second phases in the material. In this paper, we review experimental results on transition-metal (TM) doping of ZnO and the current state of theories for ferromagnetism. It is important to re-examine some of the earlier concepts for spintronics devices, such as the spin field-effect transistor, to account for the presence of the strong magnetic field that has deleterious effects. In some of these cases, the spin device appears to have no advantage relative to the conventional charge-control electronic analog. We have been unable to detect optical spin polarization in ZnO.

Ferromagnetism in Transition‐Metal Doped ZnO

Anisotropic electrical resistivity is studied in epitaxial superlattice films of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}/PrBa{sub 2}Cu{sub 3}O{sub 7-{epsilon}} grown in situ by laser ablation on SrTiO{sub 3} surfaces aligned slightly away from the (100) direction. Layer thicknesses of each compound range from two to eight atomic cells. Electrical resistivity of these superlattice films always shows a peak at some cryogenic temperature that decreases with increasing PrBa{sub 2}Cu{sub 3}O{sub 7-{epsilon}} layer thickness. Clear evidence is seen of vortex pinning or of supercurrent blocking by the step edges or by twin boundaries. The ratio of electrical resistivities for current directions parallel and perpendicular to these boundaries shows a large step-like change just above the superconductive critical temperature. The possibility is discussed that the Kosterlitz-Thouless explains this anisotropy change.

Anisotropic electrical resistivity of YBCO/PBCO superlattice films grown on miscut substrates

The emergence of Fano resonances in the extinction spectra of arrays of aluminum nanodiscs 30–200 nm in diameter deposited on [Zn, Mg]O quantum wells provide the first evidence of strong coupling in zinc oxide heterostructures.

Resonant plasmon-exciton coupling in zinc oxide quantum well-aluminum nanodisc heterostructure arrays

The growth and properties of undoped and Mn-doped ZnGa2O4 thin-film phosphors on (100) MgO and glass substrates using pulsed laser ablation were investigated. Blue-white and green emission were observed for as-deposited undoped and Mn-doped films, respectively. Luminescent properties as well as crystallinity were considerably affected by processing conditions and film stoichiometry. Films with enhanced luminescent characteristics were obtained on single crystal substrates without post-annealing.

David P. Norton

Papers

Leistungsmessung mit der Balanced Scorecard

Ferromagnetism in Transition‐Metal Doped ZnO

Anisotropic electrical resistivity of YBCO/PBCO superlattice films grown on miscut substrates

Resonant plasmon-exciton coupling in zinc oxide quantum well-aluminum nanodisc heterostructure arrays

ZnGa2O4 Thin-Film Phosphors Grown by Pulsed Laser Ablation