Journal ArticleDOI
Two-dimensional materials for next-generation computing technologies.
Chunsen Liu,Huawei Chen,Shuiyuan Wang,Qi Liu,Qi Liu,Yu-Gang Jiang,David Wei Zhang,Ming Liu,Ming Liu,Peng Zhou +9 more
TLDR
The opportunities, progress and challenges of integrating two-dimensional materials with in-memory computing and transistor-based computing technologies, from the perspective of matrix and logic computing, are discussed.Abstract:
Rapid digital technology advancement has resulted in a tremendous increase in computing tasks imposing stringent energy efficiency and area efficiency requirements on next-generation computing. To meet the growing data-driven demand, in-memory computing and transistor-based computing have emerged as potent technologies for the implementation of matrix and logic computing. However, to fulfil the future computing requirements new materials are urgently needed to complement the existing Si complementary metal–oxide–semiconductor technology and new technologies must be developed to enable further diversification of electronics and their applications. The abundance and rich variety of electronic properties of two-dimensional materials have endowed them with the potential to enhance computing energy efficiency while enabling continued device downscaling to a feature size below 5 nm. In this Review, from the perspective of matrix and logic computing, we discuss the opportunities, progress and challenges of integrating two-dimensional materials with in-memory computing and transistor-based computing technologies. This Review discusses the recent progress and future prospects of two-dimensional materials for next-generation nanoelectronics.read more
Citations
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Journal ArticleDOI
Unipolar barrier photodetectors based on van der Waals heterostructures
Yunfeng Chen,Yang Wang,Yang Wang,Zhen Wang,Yue Gu,Yan Ye,Xuliang Chai,Jiafu Ye,Yan Chen,Runzhang Xie,Yi Zhou,Zhigao Hu,Qing Li,Lili Zhang,Fang Wang,Peng Wang,Jinshui Miao,Jianlu Wang,Xiaoshuang Chen,Wei Lu,Peng Zhou,Weida Hu +21 more
TL;DR: In this article, a band-engineered van der Waals heterostructures were used to construct visible and mid-wavelength infrared unipolar barrier photodetectors.
Continuous Ultra-Thin MOS2 Films Grown by Low-Temperature Physical Vapor Deposition (Postprint)
Andrey A. Voevodin,Patrick J. Shamberger,Michael E. McConney,Rachel D. Naguy,Chris Muratore,Jianjun Hu,Baoming Wang,M. A. Haque,John E. Bultman,Michael L. Jespersen +9 more
TL;DR: In this paper, a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 deg C.
Journal Article
Black Phosphorus Field-effect Transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this paper, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI
Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities
TL;DR: In this article, the role of chalcogen atomic defects in engineering 2D TMDs, with a particular focus on device performance improvements, has been reviewed, along with the challenges and opportunities in this field.
Journal ArticleDOI
Vertical MoS2 transistors with sub-1-nm gate lengths
TL;DR: In this article , the edge of a graphene layer was used as the gate electrode for side-wall molybdenum disulfide (MoS2) transistors with an atomically thin channel and a physical gate length of sub-1 nm.
References
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Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Xuesong Li,Weiwei Cai,Jinho An,Seyoung Kim,Junghyo Nah,Dongxing Yang,Richard D. Piner,Aruna Velamakanni,Inhwa Jung,Emanuel Tutuc,Sanjay K. Banerjee,Luigi Colombo,Rodney S. Ruoff +12 more
TL;DR: It is shown that graphene grows in a self-limiting way on copper films as large-area sheets (one square centimeter) from methane through a chemical vapor deposition process, and graphene film transfer processes to arbitrary substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.
Journal ArticleDOI
Double-slit photoelectron interference in strong-field ionization of the neon dimer.
Maksim Kunitski,Nicolas Eicke,Pia Huber,Jonas Köhler,S. Zeller,J. Voigtsberger,Nikolai Schlott,K. Henrichs,H. Sann,Florian Trinter,Lothar Ph. H. Schmidt,Anton Kalinin,Markus Schöffler,Till Jahnke,Manfred Lein,Reinhard Dörner +15 more
TL;DR: The authors show the double-slit interference effect in the strong-field ionization of neon dimers by employing COLTRIMS method to record the momentum distribution of the photoelectrons in the molecular frame.
Journal ArticleDOI
Black phosphorus field-effect transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.