Dominique Drouin

TL;DR: In this paper, a porous GaN rectifying diode can be formed by oxidatively crystallizing Mg typically employed for p-doping GaN, as a layer formed under porous structure resulting in a high-k polycrystalline MgO dielectric.

TL;DR: In this paper, the potential of porous semiconductor layers for optical sensing has been assessed by examining the resonance wavelength shift in the reflectance spectra before and after infiltration of ethanol.

TL;DR: This chapter suggests that a simple low overhead inference technique can revive the functionality, enhance the performance of memristor-based VMM arrays and significantly increases their lifetime which can be a very important factor toward making this technology as a main stream player in future in-memory computing platforms.

TL;DR: In this article, the authors develop extremely small feed-forward neural networks that can be used to detect charge-state transitions in quantum dot stability diagrams and demonstrate that these neural networks can be trained on synthetic data produced by computer simulations, and robustly transferred to the task of tuning an experimental device into a desired charge state.

TL;DR: In this article, different approaches are proposed to disperse the nanoparticles, since their spontaneous agglomeration is critical, and the effects of the solution concentration and the ultrasonic homogenizer power on the dispersion of nanoparticles are examined.