D
Dominique Drouin
Researcher at Université de Sherbrooke
Publications - 213
Citations - 4353
Dominique Drouin is an academic researcher from Université de Sherbrooke. The author has contributed to research in topics: Silicon & Cathodoluminescence. The author has an hindex of 22, co-authored 204 publications receiving 3798 citations. Previous affiliations of Dominique Drouin include Institut national des sciences Appliquées de Lyon & STMicroelectronics.
Papers
More filters
Proceedings ArticleDOI
A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon
Youcef A. Bioud,Meghan N. Beattie,Abderraouf Boucherif,Mourad Jellit,Romain Stricher,Serge Ecoffey,Gilles Patriarche,David Troadec,Ali Soltani,Nadi Braidy,Matthew M. Wilkins,Christopher E. Valdivia,Karin Hinzer,Dominique Drouin,Richard Arès +14 more
TL;DR: In this paper, a porous Si interface layer is introduced to intercept dislocations and prevent them from reaching the active layers of the device, which can both act as dislocation traps and as a soft compliant substrate, which displays high flexibility.
Patent
Method using sub-micron silicide structures formed by direct-write electron beam lithography for fabricating masks for extreme ultra-violet and deep ultra-violet lithography
TL;DR: In this article, a focused electron beam is displaced on the superposed layers of metal and silicon to form a structure of etch-resistant metal/silicon compound, which is then formed by etching the three layers to leave on the substrate, the metal/sicon compound structure with the extreme ultra-violet absorbent layer beneath it.
Patent
Fabrication of structures of metal/semiconductor compound by X-ray/EUV projection lithography
TL;DR: In this article, a method for fabricating structures of etch-resistant metal-semiconductor compound on a substrate with sub-micrometer scale resolutions is described, where superposed layers of metal and semiconductor capable of reacting with each other to form etchresistant metal/semiconductors are deposited on the substrate.
Proceedings ArticleDOI
Room temperature double gate single electron transistor based standard cell library
TL;DR: A family of digital logic cells based on double gate metallic SET working at room temperature and an evaluation of the performances characteristics in terms of power consumption and delay is detailed.
Journal ArticleDOI
Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K).
Yann Beilliard,François Paquette,Frédéric Brousseau,Serge Ecoffey,Fabien Alibart,Dominique Drouin +5 more
TL;DR: In this article, the behavior of Al2O3/TiO2-x cross-point memristors in a cryogenic environment was investigated and successful resistive switching of memristor devices was reported.