D
Dominique Drouin
Researcher at Université de Sherbrooke
Publications - 213
Citations - 4353
Dominique Drouin is an academic researcher from Université de Sherbrooke. The author has contributed to research in topics: Silicon & Cathodoluminescence. The author has an hindex of 22, co-authored 204 publications receiving 3798 citations. Previous affiliations of Dominique Drouin include Institut national des sciences Appliquées de Lyon & STMicroelectronics.
Papers
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Journal ArticleDOI
Current conduction models in the high temperature single-electron transistor
TL;DR: In this article, a current conduction model based on the physical properties of the tunnel junctions is proposed to explain the discrepancies observed at high temperature between the experimental data and Monte Carlo simulations.
Proceedings ArticleDOI
Paving the Way Towards a Highly Energy-Efficient and Highly Integrated Compute Node for the Exascale Revolution: The ExaNoDe Approach
Alvise Rigo,Christian Pinto,Kevin Pouget,Daniel Raho,Denis Dutoit,Pierre-Yves Martinez,Chris Doran,Luca Benini,Iakovos Mavroidis,Manolis Marazakis,Valeria Bartsch,Guy Lonsdale,Antoniu Pop,John Goodacre,Annaik Colliot,Paul M. Carpenter,Petar Radojković,Dirk Pleiter,Dominique Drouin,Benoît Dupont de Dinechin +19 more
TL;DR: The ExaNoDe H2020 research project is presented, aiming to design a highly energy efficient and highly integrated heterogeneous compute node targeting Exascale level computing, mixing low-power processors, heterogeneous co-processors and using advanced hardware integration technologies with the novel UNIMEM Global Address Space memory system.
Journal ArticleDOI
Effect of iron catalyst on the synthesis of fullerenes and carbon nanotubes in induction plasma
TL;DR: In this article, the continuous synthesis of fullerenes and carbon nanotubes (CNTs) in induction plasmas at the 40-kW plate power level has been studied.
Journal ArticleDOI
A damascene platform for controlled ultra-thin nanowire fabrication.
TL;DR: A planarization end point detection method for metal nanostructures with adjustable thickness down to 2 nm is developed and the model adopted covers geometrical influences like oxidation and ageing.
Patent
Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
TL;DR: A focused electron beam is then applied to and displaced on the superposed layers to locally heat the metal and the silicon and cause diffusion of metal and silicon in each other to form a structure of etch-resistant metal silicide as discussed by the authors.