There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

Monte Carlo simulations have been widely used by microscopists for the last few decades. In the beginning it was a tedious and slow process, requiring a high level of computer skills from users and long computational times. Recent progress in the microelectronics industry now provides researchers with affordable desktop computers with clock rates greater than 3 GHz. With this type of computing power routinely available, Monte Carlo simulation is no longer an exclusive or long (overnight) process. The aim of this paper is to present a new user-friendly simulation program based on the earlier CASINO Monte Carlo program. The intent of this software is to assist scanning electron microscope users in interpretation of imaging and microanalysis and also with more advanced procedures including electron-beam lithography. This version uses a new architecture that provides results twice as quickly. This program is freely available to the scientific community and can be downloaded from the website: (www.gel.usherb.ca/casino).

/pdf/casino-v2-42-a-fast-and-easy-to-use-modeling-tool-for-4x80ysvonj.pdf

CASINO V2.42: a fast and easy-to-use modeling tool for scanning electron microscopy and microanalysis users.

Germanium-based nanostructures have attracted increasing attention due to favourable electrical and optical properties, which are tunable on the nanoscale. High densities of germanium nanocrystals are synthesized via electrochemical etching, making porous germanium an appealing nanostructured material for a variety of applications. In this work, we have demonstrated highly tunable electrical conductivity in mesoporous germanium layers by conducting a systematic study varying crystallite size using thermal annealing, with experimental conductivities ranging from 0.6 to 33 (×10-3) Ω-1 cm-1. The conductivity of as-prepared mesoporous germanium with 70% porosity and crystallite size between 4 and 10 nm is shown to be ∼0.9 × 10-3 Ω-1 cm-1, 5 orders of magnitude smaller than that of bulk p-type germanium. Thermal annealing for 10 min at 400 °C further reduced the conductivity; however, annealing at 450 °C caused a morphological transformation from columnar crystallites to interconnecting granular crystallites and an increase in conductivity by two orders of magnitude relative to as-prepared mesoporous germanium caused by reduced influence of surface states. We developed an electrostatic model relating the carrier concentration and mobility of p-type mesoporous germanium to the nanoscale morphology. Correlation within an order of magnitude was found between modelled and experimental conductivities, limited by variation in sample uniformity and uncertainty in void size and fraction after annealing. Furthermore, theoretical results suggest that mesoporous germanium conductivity could be tuned over four orders of magnitude, leading to optimized hybrid devices.

https://iopscience.iop.org/article/10.1088/1361-6528/aab3f7/pdf

Tunable conductivity in mesoporous germanium.

SET logic driving capability and its enhancement in 3-D integrated SET-CMOS circuit

Geometrical control of photocurrent in active Si nanowire devices

The development of metallic single-electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions (TJs) These TJs should insure high-ON current, low-OFF current, and low capacitance We propose an engineered TJ based on multidielectric stacking A number of high- $k$ and low- $k$ materials were considered to optimize the TJ’s characteristics The optimized TJ is proven to increase the $I_{\mathrm{{\scriptscriptstyle ON}}}$ current and the $I_{\mathrm{{\scriptscriptstyle ON}}}/I_{\mathrm{{\scriptscriptstyle OFF}}}$ ratio in a double-gate SET Using TiO2 plasma oxidation and Al2O3 atomic layer deposition, an SET proof of concept, with a double layer TJ, was fabricated and characterized

Tunnel Junction Engineering for Optimized Metallic Single-Electron Transistor

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

/pdf/casino-a-powerful-simulation-tool-for-cathodoluminescence-4phb0yns65.pdf

Dominique Drouin

Papers

Tunable conductivity in mesoporous germanium.

SET logic driving capability and its enhancement in 3-D integrated SET-CMOS circuit

Geometrical control of photocurrent in active Si nanowire devices

Tunnel Junction Engineering for Optimized Metallic Single-Electron Transistor

CASINO a Powerful Simulation Tool for Cathodoluminescence Applications