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Dominique Drouin

Researcher at Université de Sherbrooke

Publications -  213
Citations -  4353

Dominique Drouin is an academic researcher from Université de Sherbrooke. The author has contributed to research in topics: Silicon & Cathodoluminescence. The author has an hindex of 22, co-authored 204 publications receiving 3798 citations. Previous affiliations of Dominique Drouin include Institut national des sciences Appliquées de Lyon & STMicroelectronics.

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Quantification of spherical inclusions in the scanning electron microscope using Monte Carlo simulations

TL;DR: In this paper, Monte Carlo simulations are used to simulate x-ray and electron backscattering images of spherical inclusions in order to improve the understanding of contrast mechanism and obtain an analytical expression to perform such quantification.
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Space-Charge Limited Transport in Large-Area Monolayer Hexagonal Boron Nitride

TL;DR: The first observation of in-plane charge transport in large-area monolayer hBN, grown by chemical vapor deposition, is reported, and identifies hBN as a wide-gap 2D crystal capable of supporting charge transport at high field.
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Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

TL;DR: A new defect elimination strategy in highly mismatched heteroepitaxy is demonstrated to achieve a ultra-low dislocation density, epi-ready Ge/Si virtual substrate on a wafer scale, using a highly scalable process.
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Simulating STEM Imaging of Nanoparticles in Micrometers-Thick Substrates

TL;DR: The Monte Carlo simulation strategy described here can be used to calculate STEM images of objects of an arbitrary geometry and amorphous sample composition, to optimize the microscope settings for imaging sessions where a low electron dose is crucial for the design of equipment, or for the analysis of the composition of a certain specimen.