E
E. K. Evangelou
Researcher at University of Ioannina
Publications - 42
Citations - 1289
E. K. Evangelou is an academic researcher from University of Ioannina. The author has contributed to research in topics: Dielectric & Silicon. The author has an hindex of 18, co-authored 42 publications receiving 1216 citations. Previous affiliations of E. K. Evangelou include Olivetti & Johns Hopkins University Applied Physics Laboratory.
Papers
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Fermi-level pinning and charge neutrality level in germanium
TL;DR: The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work function indicating strong Fermi-level pinning close to the Bardeen limit.
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Interface engineering for Ge metal-oxide-semiconductor devices
Athanasios Dimoulas,David P. Brunco,S. Ferrari,Jin Won Seo,Y. Panayiotatos,A. Sotiropoulos,Thierry Conard,Matty Caymax,Sabina Spiga,Marco Fanciulli,Ch. Dieker,E. K. Evangelou,S. F. Galata,Michel Houssa,Marc Heyns +14 more
TL;DR: In this paper, the authors show that alternative passivating rare earth oxide layers prepared by molecular beam deposition produce improved electrical characteristics and a significant reduction of the density of interface states, which is the key for the observed improvements.
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Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si
TL;DR: In this paper, the interface between the dielectric film and silicon was investigated using both structural (x-ray diffraction and transmission electron microscopy) and electrical characterization were used for this purpose.
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An evaluation of the Y2O3:Eu3+ scintillator for application in medical x-ray detectors and image receptors.
TL;DR: Y2O3:Eu3+ is a medium to high overall performance material that could be used in medical x-ray detectors and image receptors and Spectral compatibility to some red sensitive optical photon detectors was excellent.
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Dielectric properties and electronic transitions of porous and nanostructured cerium oxide films
Stergios Logothetidis,Panos Patsalas,E. K. Evangelou,Nikos Konofaos,Ioannis Tsiaoussis,Nikolaos Frangis +5 more
TL;DR: In this paper, the electronic properties of nanostructured and porous cerium oxide (CeO x ) films, 110-500nm thick, grown on Si by electron beam evaporation (EBE) and ion beam assisted deposition (IBAD), were studied by high-resolution and transmission electron microscopy (HRTEM).