E
Emmanuel Dubois
Researcher at University of Toulouse
Publications - 247
Citations - 2999
Emmanuel Dubois is an academic researcher from University of Toulouse. The author has contributed to research in topics: Schottky barrier & Silicide. The author has an hindex of 28, co-authored 243 publications receiving 2835 citations. Previous affiliations of Emmanuel Dubois include Centre national de la recherche scientifique & University of Glasgow.
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Nanooxidation using a scanning probe microscope : an analytical model based on field induced oxidation
TL;DR: In this article, the authors explain quantitatively the variation of the oxide height with the polarization and the speed of the tip with a model based on field induced oxidation and estimate the thermal activation energy of the oxidation process.
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Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques for nanolithography on hydrogen-passivated silicon
TL;DR: In this paper, a comparison between scanning tunneling microscope (STM) and atomic force microscope (AFM) nanolithography techniques based on local oxidation of silicon is proposed.
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Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors
Emmanuel Dubois,Guilhem Larrieu +1 more
TL;DR: In this article, the authors investigated the Schottky barrier heights in the perspective of integration of metal-oxide-semiconductor field effect transistors (MOSFETs) with a metallic source/drain.
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Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI
TL;DR: In this paper, the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As+) implantation was studied.
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Kinetics of scanned probe oxidation: Space-charge limited growth
TL;DR: In this paper, the authors proposed an enhanced oxidation model for scanning probe microscope (SPM) nanolithography that reproduces the power-of-time law reported for tip-induced anodic oxidation.