Enrico Bellotti

TL;DR: In this paper, the impact ionization transition rates and the phonon scattering rates for both electrons and holes have been calculated numerically from the full band structure of 4H-SiC.

TL;DR: In this paper, the authors present full-band Monte Carlo simulations suggesting that the higher-energy peaks in the measured EDCs are probably uncorrelated with the carrier distribution in the active region, which would not imply that Auger recombination and possibily Auger-induced leakage play a negligible role in LED droop, but that an Auger signature cannot be recovered from the experiment performed on the LED structure under study.

TL;DR: In this paper, the authors extended the conventional method of semiconductor charge carrier transport investigations using full band ensemble Monte Carlo simulations to allow for tunneling between bands during accelerated drift of the carriers.

TL;DR: A set of software tools for the determination of the band structure of zinc-blende, wurtzite, 4H, and 6H semiconductors is presented and the results obtained are presented as a relevant case study.

TL;DR: In this article, the authors proposed two-color IR focal plane arrays (FPAs) to reduce the complexity of a multicolor IR detector and provide a significant reduction of weight and power in simpler, reliable and affordable systems.