Enrico Bellotti

TL;DR: In this paper, threading screw dislocations in wurtzite GaN are studied using Heyd-Scuseria-Ernzerhof hybrid functional with in generalized Kohn-Sham scheme.

TL;DR: Using a linearised Boltzmann equation approach, surface conductivity calculations for Dirac fermions in a 3D TI is outlined and the role of warped bands and their influence on topological factors that can enhance the overall surface mobility is examined.

TL;DR: In this article, the optical and carrier transport properties of GaN-based light-emitting diodes (LEDs) are predicted through numerical simulation using a quantum approach combined with an atomistic description of the electronic structure.

TL;DR: In this article, a band gap open topological insulator with C2v symmetry, represented through a combination of Rashba and Dresselhaus Hamiltonians, was shown to alter the preferential absorption of left and right-circularly polarized light allowing a smooth variation of the circular dichroism.

TL;DR: It is found that the MTF of small-pitch arrays exhibit sub-ideal behavior due to pixel cross-talk resulting from a long minority carrier diffusion length, and by incorporating monolithic microlenses with the InP substrate, the M TF response is improved for all pitches investigated, particularly for spatial frequencies near the respective cutoff frequencies.