Enrico Bellotti

TL;DR: In this article, the authors present a comprehensive, full band theoretical study of the high field, hole transport properties of the 4H phase of silicon carbide (4H-SiC).

TL;DR: In this article, a full-band ensemble Monte Carlo simulation has been used to study the high-field carrier transport properties of 4H-SiC. The authors used two models for the band-to-band tunneling; one is based on the overlap test and the other on the solution of the multiband Schrodinger equations.

TL;DR: In this article, an ensemble full band Monte Carlo method was used to study electron and hole transport in wurtzite phase ZnO using an accurate description of the electronic structure obtained with the nonlocal pseudopotential method and numerically calculated impact ionization transition rates based on a wavevector-dependent dielectric function.

TL;DR: Zinc oxide (ZnO) has seen practical applications much earlier than most wide band gap semiconductors, but only recently it has received renewed attention for electronic and optoelectronic applications because of its potential advantages over III-nitrides, including commercial availability of bulk single crystals, amenability to wet chemical etching, larger exciton binding energy, and excellent radiation-hard characteristics as discussed by the authors.

TL;DR: In this paper, the carrier impact ionization coefficients in AlxGa1−xN for seven alloy compositions between GaN and AlN were computed using a full-band Monte Carlo model.