There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Statistics for Spatial Data.

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

High-order harmonic generation is a nonlinear optical process that enables the creation of light pulses at frequencies much higher than that from a seed laser. The host medium for this interaction is typically a gas. Now, the process has been observed in a bulk crystalline solid with important implications for attosecond science.

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Observation of high-order harmonic generation in a bulk crystal

The coming to age of GaN-based ultraviolet avalanche photodiodes (APDs) has made them increasingly preferred over PIN photodetectors in several areas spanning from communication to defense systems, and from commercial to scientific applications. In this work, which is the second article of a two-part series, we study the physics and performance of GaN APDs using the full-band Monte Carlo (FBMC) model described in Part I. The proposed FBMC model is based on a realistic electronic structure obtained by pseudopotential calculations and a phonon dispersion relation determined by ab initio techniques. We determine the key performance figures such as the carrier multiplication gain and the breakdown voltage for several GaN APD structures that have been fabricated by a number of experimental groups. The calculated electron and hole multiplication gains as a function of the applied bias, as well as the breakdown voltage, are found to be in good agreement with the experimental data available. Based on the FBMC res...

Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors

This work presents an in-depth investigation of the properties of complexes composed of hydrogen, silicon or oxygen with carbon, which are major unintentional impurities in undoped GaN. This manuscript is a complement to our previous work on carbon--carbon and carbon-vacancy complexes. We have employed a first-principles method using Heyd-Scuseria-Ernzerhof hybrid functionals within the framework of generalized Kohn-Sham density functional theory. Two H--C, four Si--C and five O--C complexes in different charge states have been considered. After full geometry relaxations, formation energies, binding energies and both thermal and optical transition levels were obtained. The calculated energy levels have been systematically compared with the experimentally observed carbon related trap levels. Furthermore, we computed vibrational frequencies for selected defect complexes and defect concentrations were estimated in the low, mid and high carbon doping scenarios considering two different cases where electrically active defects: (a) only carbon and vacancies and (b) not only carbon and vacancies but also hydrogen, silicon and oxygen. We confirmed that $\mathrm{C_N}$ is a dominant acceptor in GaN. In addition to it, substantial amount of $\mathrm{Si_{Ga}-C_N}$ complex exists in a neutral form. This complex is a likely candidate for unknown form of carbon observed in undoped $n$-type GaN.

A first-principles study of carbon-related energy levels in GaN: Part II - Complexes formed by carbon and hydrogen, silicon or oxygen

The wave-vector dependent, electron initiated, impact ionization transition rates for the cubic and hexagonal phases of ZnS have been numerically determined using a pseudopotential calculated band-structure and wave-vector dependent dielectric function. The rates for both phases show a strong dependence on the relative band structures. A detailed band-by-band analysis of the transition rate in the first Brillouin zone has been performed to determine the wave-vector dependence of the rate. The energy dependent rates have also been computed by averaging the transition rate over energy. It is found that the hexagonal phase of ZnS exhibits a higher ionization transition rate than the cubic phase. A preliminary estimation of the nature of the threshold has been made using a previously published phonon scattering rate.

Calculation of the electron initiated impact ionization transition rate in cubic and hexagonal phase ZnS

Recent experiments of electron emission spectroscopy (EES) on III-nitride light-emitting diodes (LEDs) have shown a correlation between droop onset and hot electron emission at the cesiated surface of the LED p-cap. The observed hot electrons have been interpreted as a direct signature of Auger recombination in the LED active region, as highly energetic Auger-excited electrons would be collected in long-lived satellite valleys of the conduction band so that they would not decay on their journey to the surface across the highly doped p-contact layer. We discuss this interpretation by using a full-band Monte Carlo model based on first-principles electronic structure and lattice dynamics calculations. The results of our analysis suggest that Auger-excited electrons cannot be unambiguously detected in the LED structures used in the EES experiments. Additional experimental and simulative work are necessary to unravel the complex physics of GaN cesiated surfaces.

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Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective

2-D numerical simulation is employed to assess a number of possible design approaches aimed at optimizing the internal quantum efficiency (IQE) of ZnO-based light-emitting diodes (LEDs) grown along the c-axis. First, the relative performance of similar ZnO-based and GaN-based LED structures is compared and discussed. Second, the effects on IQE of thickness, doping, and alloy composition of the MgZnO electron blocking layer (EBL) is studied in order to maximize the carrier confinement in the active region. The optimum number of quantum wells is also addressed, and different strategies for barrier doping are considered, showing that, if the EBL is doped p-type, a similar doping in the barriers is not required to compensate for the spontaneous and piezoelectric interface charges and to enhance hole transport. Different choices of the geometrical and doping parameters of the n-type access region are considered, and the impact of different values of the electron mobility is determined. Finally, the analysis of a ZnO/BeZnO LED structure suggests that the incorporation of BeZnO layers does not provide significant advantages.

Enrico Bellotti

Papers

Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors

A first-principles study of carbon-related energy levels in GaN: Part II - Complexes formed by carbon and hydrogen, silicon or oxygen

Calculation of the electron initiated impact ionization transition rate in cubic and hexagonal phase ZnS

Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective

Numerical Study of ZnO-Based LEDs