Journal ArticleDOI
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
Gaudenzio Meneghesso,Giovanni Verzellesi,R. Pierobon,Fabiana Rampazzo,Alessandro Chini,Umesh K. Mishra,C. Canali,Enrico Zanoni +7 more
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TLDR
In this paper, the authors investigated drain current dispersion effects in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements.Citations
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The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Journal ArticleDOI
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Jungwoo Joh,J.A. del Alamo +1 more
TL;DR: In this paper, the authors present a methodology to study trapping characteristics in GaN HEMTs that is based on current-transient measurements and identify several traps inside the AlGaN barrier layer or at the surface close to the gate edge and in the GaN buffer.
Journal ArticleDOI
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
Davide Bisi,Matteo Meneghini,Carlo De Santi,Alessandro Chini,Michael Dammann,Peter Brückner,Michael Mikulla,Gaudenzio Meneghesso,Enrico Zanoni +8 more
TL;DR: In this paper, the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation.
Journal ArticleDOI
Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices
TL;DR: In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented, revealing clear mechanisms of current collapse and related dispersion effects.
Journal ArticleDOI
Electronic surface and dielectric interface states on GaN and AlGaN
TL;DR: In this article, the authors summarize the current understanding of the gate leakage current and current collapse mechanisms, where awareness of the surface defects is the key to controlling and improving device performance.
References
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Journal ArticleDOI
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.
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The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
TL;DR: In this paper, the authors reported the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's on the same wafer.
Journal ArticleDOI
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Steven C. Binari,K. Ikossi,J.A. Roussos,Walter Kruppa,Doewon Park,Harry B. Dietrich,Daniel D. Koleske,Alma Wickenden,R. L. Henry +8 more
TL;DR: In this article, the dc small-signal and microwave power output characteristics of AlGaN/GaN HEMTs are presented, and it is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer.
Journal ArticleDOI
Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination
TL;DR: In this article, the surface potential changes are caused by electrons which tunnel from the gate under high bias stress and get trapped at the surface states near the gate, which correlates with a large improvement in microwave power performance in these devices after passivation.