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Hang Chi

Researcher at University of Michigan

Publications -  75
Citations -  6871

Hang Chi is an academic researcher from University of Michigan. The author has contributed to research in topics: Thermoelectric effect & Seebeck coefficient. The author has an hindex of 32, co-authored 71 publications receiving 5501 citations. Previous affiliations of Hang Chi include Brookhaven National Laboratory & Michigan State University.

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Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe

TL;DR: A record high ZTdev ∼1.34, with ZT ranging from 0.7 to 2.0 at 300 to 773 kelvin, realized in hole-doped tin selenide (SnSe) crystals, arises from the ultrahigh power factor, which comes from a high electrical conductivity and a strongly enhanced Seebeck coefficient enabled by the contribution of multiple electronic valence bands present in SnSe.
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Non-equilibrium processing leads to record high thermoelectric figure of merit in PbTe-SrTe.

TL;DR: A thermoelectric figure of merit ZT of 2.5 at 923 K is demonstrated by the cumulative integration of several performance-enhancing concepts in a single material system using hole-doped PbTe–8%SrTe samples.
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High Performance Thermoelectricity in Earth-Abundant Compounds Based on Natural Mineral Tetrahedrites

TL;DR: In this article, the authors report dimensionless thermoelectric properties of tetrahedrites, the most widespread sulfosalts on Earth, and further show that the natural mineral itself can be used directly as an inexpensive source of energy.
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Ultrahigh Thermoelectric Performance by Electron and Phonon Critical Scattering in Cu2Se1‐xIx

TL;DR: Iodine-doped Cu2 Se shows a significantly improved thermoelectric performance during phase transitions by electron and phonon critical scattering, leading to a dramatic increase in zT by a factor of 3-7 times culminating in z t values of 2.3 at 400 K.
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Codoping in SnTe: Enhancement of Thermoelectric Performance through Synergy of Resonance Levels and Band Convergence

TL;DR: A significant enhancement of the thermoelectric performance of p-type SnTe over a broad temperature plateau with a peak ZT value of ∼1.4 at 923 K through In/Cd codoping and a CdS nanostructuring approach is reported.