Transparent conductors as solar energy materials: A panoramic review

A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process. Modeling studies of film growth and extensive experimental evidence show a direct link between the energetics of the deposition process and film microstructure, which in turn determines the nature and magnitude of the stress. The fundamental quantities are the particle flux and energy striking the condensing film, which are a function of many process parameters such as pressure (discharge voltage), target/sputtering gas mass ratio, cathode shape, bias voltage, and substrate orientation. Tensile stress is generally observed in zone 1-type, porous films and is explained in terms of the grain boundary relaxation model, whereas compressive stress, observed in zone T-type, dense films, is interpreted in terms of the atomic peening mechanism. Modeling of the atomic peening mechanism and experimental data indicate that the normalized moment...

Intrinsic stress in sputter-deposited thin films

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current becomes too large. This led to the replacement of SiO2 by a physically thicker layer of a higher dielectric constant or ‘high-K’ oxide such as hafnium oxide. Intensive research was carried out to develop these oxides into high quality electronic materials. In addition, the incorporation of Ge in the CMOS transistor structure has been employed to enable higher carrier mobility and performance. This review covers both scientific and technological issues related to the high-K gate stack – the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging to achieve the thinnest oxide thicknesses. The high K oxides were implemented in conjunction with a replacement of polycrystalline Si gate electrodes with metal gates. The strong metallurgical interactions between the gate electrodes and the HfO2 which resulted an unstable gate threshold voltage resulted in the use of the lower temperature ‘gate last’ process flow, in addition to the standard ‘gate first’ approach. Work function control by metal gate electrodes and by oxide dipole layers is discussed. The problems associated with high K oxides on Ge channels are also discussed.

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High-K materials and metal gates for CMOS applications

The control of luminous radiation has extremely important implications for modern and future technologies as well as in medicine. In this Review, we detail chemical structures and their relevant photophysical features for various groups of materials, including organic dyes such as metalloporphyrins and metallophthalocyanines (and derivatives), other common organic materials, mixed metal complexes and clusters, fullerenes, dendrimeric nanocomposites, polymeric materials (organic and/or inorganic), inorganic semiconductors, and other nanoscopic materials, utilized or potentially useful for the realization of devices able to filter in a smart way an external radiation. The concept of smart is referred to the characteristic of those materials that are capable to filter the radiation in a dynamic way without the need of an ancillary system for the activation of the required transmission change. In particular, this Review gives emphasis to the nonlinear optical properties of photoactive materials for the functi...

Nonlinear Optical Materials for the Smart Filtering of Optical Radiation.

Recently, strongly modulated photonic crystals, fabricated by the state-of-the-art semiconductor nanofabrication process, have realized various novel optical properties. This paper describes the way in which they differ from other optical media, and clarifies what they can do. In particular, three important issues are considered: light confinement, frequency dispersion and spatial dispersion. First, I describe the latest status and impact of ultra-strong light confinement in a wavelength-cubic volume achieved in photonic crystals. Second, the extreme reduction in the speed of light is reported, which was achieved as a result of frequency dispersion management. Third, strange negative refraction in photonic crystals is introduced, which results from their unique spatial dispersion, and it is clarified how this leads to perfect imaging. The last two sections are devoted to applications of these novel properties. First, I report the fact that strong light confinement and huge light–matter interaction enhancement make strongly modulated photonic crystals promising for on-chip all-optical processing, and present several examples including all-optical switches/memories and optical logics. As a second application, it is shown that the strong light confinement and slow light in strongly modulated photonic crystals enable the adiabatic tuning of light, which leads to various novel ways of controlling light, such as adiabatic frequency conversion, efficient optomechanics systems, photon memories and photons pinning.

https://iopscience.iop.org/article/10.1088/0034-4885/73/9/096501/pdf

Manipulating light with strongly modulated photonic crystals

Some effects on the properties of electron-beam evaporated thin films produced by ion bombardment of the growing film are reported. Substantial increases in the packing densities of SiO2 , TiO2 , and ZrO2 films have been produced as measured by the reduction in the adsorption of moisture when the films are exposed to a humid atmosphere. In a ZrO2-SiO2 multilayer interference filter, changes in the wavelength of the peak transmittance on exposure to the atmosphere have been reduced from 8 nm for films deposited without ion bombardment to <1 nm for ion-beam-assisted films.

Ion-beam-assisted deposition of thin films.

The seven participating laboratories received films of two different thicknesses of Sc2O3 and Rh. All samples of each material were prepared in a single deposition run. Brief descriptions are given of the various methods used for determination of the optical constants of these coating materials. The measurement data are presented, and the results are compared. The mean of the variances of the Sc2O3 refractive-index determinations in the 0.40–0.75-nm spectral region was 0.03. The corresponding variances for the refractive index and absorption coefficient of Rh were 0.35 and 0.26, respectively.

/pdf/multiple-determination-of-the-optical-constants-of-thin-film-4qzn2lhdic.pdf

Multiple determination of the optical constants of thin-film coating materials

ZnS and ZnSe interference filters exhibit fast switch‐on times (10 and 50 μs, respectively) with milliwatt powers at room temperature The nonlinearity in the refractive index is found to result from heating by absorption Crosstalk between two light beams is negligible for separations exceeding 20 μm with 77‐μm beam diameters

Microsecond room-temperature optical bistability and crosstalk studies in ZnS and ZnSe interference filters with visible light and milliwatt powers

Optical and microstructural properties of hafnium dioxide thin films

Monitoring implies the measurement and control of the parameters of optical thin films during deposition with the object of ensuring the production of an acceptable coating. Monitoring techniques usually concentrate on film thickness as the most important parameter. The principal monitoring arrangements in current use are surveyed with a brief account of their relative merits. It is shown that they are less able to cope with refractive-index errors than with simple thickness errors and that tight control of material parameters is required to take advantage of recent advances in monitoring techniques.

H. A. Macleod

Papers

Ion-beam-assisted deposition of thin films.

Multiple determination of the optical constants of thin-film coating materials

Microsecond room-temperature optical bistability and crosstalk studies in ZnS and ZnSe interference filters with visible light and milliwatt powers

Optical and microstructural properties of hafnium dioxide thin films

Monitoring of optical coatings.