H
Hiroki Kondo
Researcher at Nagoya University
Publications - 501
Citations - 7926
Hiroki Kondo is an academic researcher from Nagoya University. The author has contributed to research in topics: Etching (microfabrication) & Plasma etching. The author has an hindex of 41, co-authored 483 publications receiving 7010 citations. Previous affiliations of Hiroki Kondo include Toyota & Kobe University.
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Patent
Lever-Type Connector Assembly
TL;DR: In this paper, a connector assembly is disclosed including a first connector and a second connector matable with the first connector, including a lever attached to a moving housing, the lever moving the moving housing between a mating released position, an intermediate position, and a mating completed position.
Journal Article
Three-dimensional topological magnon systems
TL;DR: In this paper, the concept of topological magnon systems was introduced, which are bosonic generalizations of three-dimensional topological insulators, and the notion of pseudo-time-reversal symmetry was introduced to measure the presence or absence of symmetry-protected surface states.
Journal ArticleDOI
Surface loss probability of H radicals on silicon thin films in SiH 4 /H 2 plasma
Yusuke Abe,Atsushi Fukushima,Keigo Takeda,Hiroki Kondo,Kenji Ishikawa,Makoto Sekine,Masaru Hori +6 more
TL;DR: In this paper, the surface loss probability of H radicals in SiH4/H2 plasma was investigated using vacuum ultraviolet resonance absorption spectroscopy, and it was shown that the surface reaction is influenced by deposition precursors, such as SiH3 radicals.
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Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries
Ranjit R. Borude,Hirotsugu Sugiura,Kenji Ishikawa,Takayoshi Tsutsumi,Hiroki Kondo,Nobuyuki Ikarashi,Masaru Hori +6 more
TL;DR: In this paper, the in situ binding of tin oxide (SnO2) nanoparticles (SNp) and graphene nanosheets (GNs) that synthesized simultaneously in single-step atmospheric-pressure processing was achieved at a low temperature by employing in-liquid plasma in a solution of tin chloride (SnCl2·2H2O) in ethanol as the only precursor.
Journal ArticleDOI
Effects of gas residence time of CH4/H2 on sp2 fraction of amorphous carbon films and dissociated methyl density during radical-injection plasma-enhanced chemical vapor deposition
Hirotsugu Sugiura,Lingyun Jia,Hiroki Kondo,Kenji Ishikawa,Takayoshi Tsutsumi,Toshio Hayashi,Keigo Takeda,Makoto Sekine,Masaru Hori +8 more
TL;DR: In this paper, mass spectrometric measurements of CH3 density during radical-injection plasmaenhanced chemical vapor deposition to consider the sp2 fraction of amorphous carbon (a-C) films were performed.