There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

The lithium metal battery is strongly considered to be one of the most promising candidates for high-energy-density energy storage devices in our modern and technology-based society. However, uncontrollable lithium dendrite growth induces poor cycling efficiency and severe safety concerns, dragging lithium metal batteries out of practical applications. This review presents a comprehensive overview of the lithium metal anode and its dendritic lithium growth. First, the working principles and technical challenges of a lithium metal anode are underscored. Specific attention is paid to the mechanistic understandings and quantitative models for solid electrolyte interphase (SEI) formation, lithium dendrite nucleation, and growth. On the basis of previous theoretical understanding and analysis, recently proposed strategies to suppress dendrite growth of lithium metal anode and some other metal anodes are reviewed. A section dedicated to the potential of full-cell lithium metal batteries for practical applicatio...

Toward Safe Lithium Metal Anode in Rechargeable Batteries: A Review.

The author's preface gives an outline: "This book is about weakconvergence methods in metric spaces, with applications sufficient to show their power and utility. The Introduction motivates the definitions and indicates how the theory will yield solutions to problems arising outside it. Chapter 1 sets out the basic general theorems, which are then specialized in Chapter 2 to the space C[0, l ] of continuous functions on the unit interval and in Chapter 3 to the space D [0, 1 ] of functions with discontinuities of the first kind. The results of the first three chapters are used in Chapter 4 to derive a variety of limit theorems for dependent sequences of random variables. " The book develops and expands on Donsker's 1951 and 1952 papers on the invariance principle and empirical distributions. The basic random variables remain real-valued although, of course, measures on C[0, l ] and D[0, l ] are vitally used. Within this framework, there are various possibilities for a different and apparently better treatment of the material. More of the general theory of weak convergence of probabilities on separable metric spaces would be useful. Metrizability of the convergence is not brought up until late in the Appendix. The close relation of the Prokhorov metric and a metric for convergence in probability is (hence) not mentioned (see V. Strassen, Ann. Math. Statist. 36 (1965), 423-439; the reviewer, ibid. 39 (1968), 1563-1572). This relation would illuminate and organize such results as Theorems 4.1, 4.2 and 4.4 which give isolated, ad hoc connections between weak convergence of measures and nearness in probability. In the middle of p. 16, it should be noted that C*(S) consists of signed measures which need only be finitely additive if 5 is not compact. On p. 239, where the author twice speaks of separable subsets having nonmeasurable cardinal, he means "discrete" rather than "separable." Theorem 1.4 is Ulam's theorem that a Borel probability on a complete separable metric space is tight. Theorem 1 of Appendix 3 weakens completeness to topological completeness. After mentioning that probabilities on the rationals are tight, the author says it is an

Convergence of probability measures

Naphthalenesulfonamides such as N-(6-amino-hexyl)-5-chloro-1-naphthalenesulfonamide (W-7) are potent calmodulin (CaM) antagonists and act upon several protein kinases at higher concentration. When the naphthalene ring was replaced by isoquinoline, the derivatives were no longer CaM antagonists but retained the ability to inhibit protein kinases, and some of the derivatives exhibited selective inhibition toward a certain protein kinase. cAMP-dependent, cGMP-dependent, and Ca2+-phospholipid-dependent (protein kinase C) protein kinases were inhibited significantly by addition of 10(-6) M N-[2-(methylamino)ethyl]-5-isoquinoline-sulfonamide (H-8) and 1-(5-isoquinolinylsulfonyl)-2-methylpiperazine (H-7). H-8 was the most active of the inhibitors in this series and inhibited more markedly cyclic nucleotide dependent protein kinases, than other kinases, while the derivative with the sulfonylpiperazine residue (H-7) was the most potent in inhibiting protein kinase C. Apparent Ki values of H-8 were 0.48 and 1.2 microM for cGMP-dependent and cAMP-dependent protein kinases, respectively, and the Ki value of H-7 for protein kinase C was 6 microM. Both the holoenzyme and the catalytic subunit (or fragment), which is active without an enzyme activator, are susceptible to these compounds with a similar concentration dependency, thereby indicating that the inhibitory effect is attributed to the direct interaction of the compound with the active center of the enzyme but not with the enzyme activator. The inhibitions were freely reversible and of the competitive type with respect to ATP and of the noncompetitive type with respect to the phosphate acceptor.(ABSTRACT TRUNCATED AT 250 WORDS)

Isoquinolinesulfonamides, novel and potent inhibitors of cyclic nucleotide dependent protein kinase and protein kinase C.

Metal Oxides and Oxysalts as Anode Materials for Li Ion Batteries

To satisfy the requirement for mask materials in high-temperature plasma etching, a novolac-based polymer mask was evaluated during high-temperature Cl2 plasma etching. Although the etch rate of 8 nm/min was rather high at a low temperature of 230 °C, it decreased with the increase in temperature. The aromatic ring structures were significantly modified by vacuum ultraviolet (VUV) and Cl radicals during the processes above 300 °C and transformed to a highly cross-linked amorphous carbon (a-C) layer at the surface confirmed from infrared and Raman spectra. The formation of this a-C layer improved the etching resistance of the polymer mask. On the other hand, surface roughness can also be improved after processes above 300 °C corresponding to the generation of the a-C layer. Therefore, this polymer mask is a promising candidate for high-temperature plasma etching with high etch resistance, and a smooth surface can be obtained during processes above 300 °C.

Reaction mechanisms between chlorine plasma and a spin-on-type polymer mask for high-temperature plasma etching

P-1-5 Physical and Electrical Properties of Addition Ti into Er2O3 Gate Dielectrics T. M. Pan, W. H. Hsu, C. C. Huang, W. S. Huang, K. C. Huang and J. L. Hong, Chang Gung Univ. (Taiwan) P-1-6 In-Situ Fluorinated LowTemperature Polycrystalline Silicon (LTPS) Thin-Film Transistors (TFT) with Low Trapping and Off Current by CF4 Plasma W. H. Sung1, C. H. Kao1, H. K. Peng1, S. F. Huang2, W. F. Tsai2, C. F. Ai2, C. R. Chen3 and C. S. Lai, 1Univ. of Chang Gung, 2Inst. of Nuclear Energy Research and 3Corp. of Material Sci. Service (Taiwan)

Pr-Oxide-Based Dielectric Films on Ge Substrates

/pdf/morphological-control-of-carbon-nanowalls-by-reactive-ion-123uthyalt.pdf

Morphological control of carbon nanowalls by reactive ion etching

Crystallographic and Electrical Properties of Semiconducting Graphene Nanoribbon Grown Employing CH 4 /H 2 plasma

The crystalline structures and electrical properties of high-nitrogen (N)-content Hf–Si–N films were investigated. When the N2 concentration of a sputtering ambient increases from 9.0 to 13.0%, Hf–Si–N resistivity increases by a factor of more than 105 despite the almost constant N content of the film. According to X-ray diffraction profiles and X-ray photoelectron spectra, such high-N-content Hf–Si–N films consist of Hf3N4 and Si3N4, and have energy band gaps. These results indicate that Hf3N4 and high-N-content Hf–Si–N including Hf3N4 have semiconducting features. In Pt/Hf–Si–N/Pt structures with high-N-content Hf–Si–N, nonlinear current–voltage characteristics and hysteresis behaviors are also observed, which markedly change depending on N2 concentration and postdeposition annealing temperature. Although the elemental composition and crystalline structure hardly change, the phase separation and segregation of nanocrystallites clearly develop. Therefore, these unique electrical characteristics are attributed to current conduction at grain boundaries or Pt/Hf–Si–N interfaces.

Hiroki Kondo

Papers

Reaction mechanisms between chlorine plasma and a spin-on-type polymer mask for high-temperature plasma etching

Pr-Oxide-Based Dielectric Films on Ge Substrates

Morphological control of carbon nanowalls by reactive ion etching

Crystallographic and Electrical Properties of Semiconducting Graphene Nanoribbon Grown Employing CH 4 /H 2 plasma

Crystalline Structures and Electrical Properties of High Nitrogen-content Hf-Si-N Films