H
Huai Huang
Researcher at IBM
Publications - 81
Citations - 994
Huai Huang is an academic researcher from IBM. The author has contributed to research in topics: Dielectric & Layer (electronics). The author has an hindex of 14, co-authored 81 publications receiving 825 citations. Previous affiliations of Huai Huang include University of Texas at Austin.
Papers
More filters
Journal ArticleDOI
Plasma processing of low-k dielectrics
Mikhail R. Baklanov,Jean-Francois de Marneffe,Denis Shamiryan,Adam Urbanowicz,Hualiang Shi,Tatyana Rakhimova,Huai Huang,Paul S. Ho +7 more
TL;DR: In this article, an in-depth overview of the present status and novel developments in the field of plasma processing of low dielectric constant (low-k) materials developed for advanced interconnects in ULSI technology is presented.
Journal ArticleDOI
Mechanistic study of plasma damage of low k dielectric surfaces
J. Bao,Hualiang Shi,Junjun Liu,Huai Huang,Paul S. Ho,Michael D. Goodner,Mansour Moinpour,Grant M. Kloster +7 more
TL;DR: In this paper, a mechanistic view of the plasma damage to low k dielectric materials was investigated from an analytical point of view, and the damage was characterized by angle resolved x-ray photoelectron spectroscopy, X-ray reflectivity, Fourier transform infrared spectrograph, and contact angle measurements.
Journal ArticleDOI
Role of ions, photons, and radicals in inducing plasma damage to ultra low-k dielectrics
Hualiang Shi,Huai Huang,J. Bao,J. Bao,Junjun Liu,Paul S. Ho,Yifeng Zhou,Jeremy T. Pender,Michael D. Armacost,David F. Kyser +9 more
TL;DR: In this paper, the role of ions, photons and radicals in the damage induced by CO2 and O2 plasmas to an ultra low-k (ULK) dielectric film was investigated.
Proceedings ArticleDOI
Future on-chip interconnect metallization and electromigration
Chao-Kun Hu,James J. Kelly,Huai Huang,Motoyama Koichi,Hosadurga Shobha,Y. Ostrovski,J. H-C Chen,Raghuveer R. Patlolla,B. Peethala,Praneet Adusumilli,Terry A. Spooner,Roger A. Quon,Lynne Gignac,C. M. Breslin,G. Lian,M. Ali,J. Benedict,X. Lin,S. Smith,Vimal Kamineni,X. Zhang,Frank W. Mont,Shariq Siddiqui,Frieder H. Baumann +23 more
TL;DR: Data showed that Cu with Co cap, Co and Ru interconnects all had highly reliable electromigration, if the Cu liner cannot be scaled down below 2 nm in future interconnect technologies.
Proceedings ArticleDOI
Experimental study of nanoscale Co damascene BEOL interconnect structures
James J. Kelly,Chen Jia,Huai Huang,Chenming Hu,Eric G. Liniger,Raghuveer R. Patlolla,B. Peethala,Praneet Adusumilli,Hosadurga Shobha,Takeshi Nogami,Terry A. Spooner,Elbert E. Huang,Daniel C. Edelstein,Donald F. Canaperi,Vimal Kamineni,Frank W. Mont,Shariq Siddiqui +16 more
TL;DR: In this paper, the authors characterize integrated dual damascene Co and Cu BEOL lines and vias, at 10 nm node dimensions, and show that the Co via resistance was just 1.7 times that of Cu, with the smaller ratio attributed to the barrier layer via resistance.