Hyun Cho

TL;DR: In this article, the performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature.

TL;DR: A brief review of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors and GaN metaloxide semiconductor field effect transistors is given in this article.

TL;DR: In this paper, a GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2/Ar dry etching for mesa formation, which shows improved gain as the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated temperatures (> 250°C).

TL;DR: In this paper, a variety of different plasma chemistries, including SF6, Cl2, ICl, and IBr, have been examined for dry etching of 6H-SiC in high ion density plasma tools (inductively coupled plasma and electron cyclotron resonance).

TL;DR: In this paper, four different F2-based plasma chemistries for high-rate etching of SiC under inductively coupled plasma (ICP) conditions were examined and three different materials (Al, Ni, and indium-tin oxide) were compared as possible masks during deep SiC etching for through-wafer via holes.