J
J. Minguet Lopez
Researcher at University of Grenoble
Publications - 8
Citations - 31
J. Minguet Lopez is an academic researcher from University of Grenoble. The author has contributed to research in topics: Resistive random-access memory & Computer science. The author has an hindex of 2, co-authored 5 publications receiving 10 citations.
Papers
More filters
Proceedings ArticleDOI
Crosspoint Memory Arrays: Principle, Strengths and Challenges
Gabriel Molas,D. Alfaro Robayo,J. Minguet Lopez,Laurent Grenouillet,C. Carabasse,Gabriele Navarro,C. Sabbione,Mathieu Bernard,Carlo Cagli,N. Castellani,D. Deleruyelle,Marc Bocquet,Jean-Michel Portal,Etienne Nowak +13 more
TL;DR: The performances of the 1S1R technology composed of an HfO2 OxRAM (1R) combined with a GeSeSbN based Ovonic Threshold Switch (1S) are presented.
Proceedings ArticleDOI
Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays
J. Minguet Lopez,N. Castellani,L. Grenouillet,L. Reganaz,G. Navarro,Mathieu Bernard,C. Carabasse,T. Magis,D. Deleruyelle,Marc Bocquet,J-M. Portal,Etienne Nowak,G. Molas +12 more
TL;DR: In this article, the scalability of GeSeSbN-based OTS selector for high density crossbar integration is investigated on k-bit arrays, and the impact of cell size down to 80nm on selector electrical characteristics, typical switching voltages and currents are deeply investigated.
Proceedings ArticleDOI
Optimization of RRAM and OTS selector for advanced low voltage CMOS compatibility
J. Minguet Lopez,D. Alfaro Robayo,L. Grenouillet,C. Carabasse,G. Navarro,R. Fournel,C. Sabbione,Mathieu Bernard,O. Billoint,C. Cagli,L. Couture,D. Deleruyelle,Marc Bocquet,Jean-Michel Portal,E. Nowak,G. Molas +15 more
TL;DR: Al 2 O 3 based conductive bridge RAM (CBRAM) is co-integrated with an optimized Ge-Se-Sb-N based back-end selector in 1S1R memory arrays for low voltage and advanced CMOS compatibility as mentioned in this paper.
Proceedings ArticleDOI
Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization
J. Minguet Lopez,L. Hudeley,L. Grenouillet,D. Alfaro Robayo,J. Sandrini,G. Navarro,Mathieu Bernard,C. Carabasse,D. Deleruyelle,N. Castellani,Marc Bocquet,J-M. Portal,Etienne Nowak,G. Molas +13 more
TL;DR: In this article, an experimental study on HfO 2 OxRAM technology co-integrated with GSSN-based Ovonic Threshold Selector (OTS) in 4kb memory arrays, supported by deep theoretical analysis is performed.
Proceedings ArticleDOI
Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration
D. Alfaro Robayo,D. Deleruyelle,E. Vianello,N. Castellani,Lorenzo Ciampolini,Bastien Giraud,C. Cagli,Gerard Ghibaudo,E. Nowak,G. Molas,Gilbert Sassine,J. Minguet Lopez,L. Grenouillet,A. Verdy,G. Navarro,Mathieu Bernard,E. Esmanhotto,C. Carabasse +17 more
TL;DR: Variability of voltage margin, selectivity and current margin were deeply investigated in a statistical way for the 1st time to identify the most critical features for high-density crossbar arrays.