O
O. Billoint
Researcher at University of Grenoble
Publications - 45
Citations - 684
O. Billoint is an academic researcher from University of Grenoble. The author has contributed to research in topics: Transistor & Place and route. The author has an hindex of 12, co-authored 42 publications receiving 569 citations.
Papers
More filters
Proceedings ArticleDOI
3DVLSI with CoolCube process: An alternative path to scaling
Perrine Batude,Claire Fenouillet-Beranger,L. Pasini,V. Lu,F. Deprat,Laurent Brunet,Benoit Sklenard,F. Piegas-Luce,M. Casse,B. Mathieu,O. Billoint,G. Cibrario,Ogun Turkyilmaz,Hossam Sarhan,Sebastien Thuries,Louis Hutin,S. Sollier,Julie Widiez,L. Hortemel,Claude Tabone,M.-P. Samson,Bernard Previtali,N. Rambal,F. Ponthenier,J. Mazurier,Remi Beneyton,M. Bidaud,Emmanuel Josse,E. Petitprez,O. Rozeau,Maurice Rivoire,C. Euvard-Colnat,A. Seignard,F. Fournel,L. Benaissa,Perceval Coudrain,P. Leduc,J.M. Hartmann,Pascal Besson,Sebastien Kerdiles,C. Bout,Fabrice Nemouchi,A. Royer,C. Agraffeil,G. Ghibaudo,Thomas Signamarcheix,Michel Haond,Fabien Clermidy,O. Faynot,Maud Vinet +49 more
TL;DR: In this paper, the authors propose a 3D VLSI with a CoolCube integration to vertically stack several layers of devices with a unique connecting via density above a million/mm2.
Proceedings ArticleDOI
3D Sequential Integration: Application-driven technological achievements and guidelines
Perrine Batude,Laurent Brunet,C. Fenouillet-Beranger,Francois Andrieu,J.-P. Colinge,Didier Lattard,E. Vianello,Sebastien Thuries,O. Billoint,Pascal Vivet,Cristiano Santos,B. Mathieu,Benoit Sklenard,C.-M. V. Lu,J. Micout,F. Deprat,E. Avelar Mercado,F. Ponthenier,N. Rambal,M.-P. Samson,M. Casse,Sebastien Hentz,Julien Arcamone,Gilles Sicard,Louis Hutin,L. Pasini,A. Ayres,O. Rozeau,R. Berthelon,Fabrice Nemouchi,Philippe Rodriguez,J.-B. Pin,D. Larmagnac,A. Duboust,V. Ripoche,S. Barraud,N. Allouti,Sébastien Barnola,C. Vizioz,J.M. Hartmann,Sebastien Kerdiles,P. Acosta Alba,S. Beaurepaire,V. Beugin,F. Fournel,Pascal Besson,Virginie Loup,R. Gassilloud,François Martin,X. Garros,Frédéric Mazen,Bernard Previtali,C. Euvrard-Colnat,V. Balan,C. Comboroure,M. Zussy,Mazzocchi,O. Faynot,M. Vinet +58 more
TL;DR: 3D Sequential Integration with ultra-small 3D contact pitch with Ultra-Low TB FETs has potential for low-power applications and allow for the stacking of multiple layers.
Journal ArticleDOI
A 460 MHz at 397 mV, 2.6 GHz at 1.3 V, 32 bits VLIW DSP Embedding F MAX Tracking
Edith Beigne,Alexandre Valentian,Ivan Miro-Panades,Robin Wilson,Philippe Flatresse,Fady Abouzeid,Thomas Benoist,Christian Bernard,Sebastien Bernard,O. Billoint,Sylvain Clerc,Bastien Giraud,Anuj Grover,Julien Le Coz,Jean-Philippe Noel,Olivier Thomas,Yvain Thonnart +16 more
TL;DR: This paper describes a 32 bits DSP fabricated in 28 nm Ultra Thin Body and Box FDSOI technology that decreases the core VDDMIN to 397 mV, increases clock frequency and maximum frequency tracking design techniques are proposed for wide voltage range operation.
Proceedings ArticleDOI
3D sequential integration opportunities and technology optimization
Perrine Batude,Benoit Sklenard,Claire Fenouillet-Beranger,Bernard Previtali,Claude Tabone,Olivier Rozeau,O. Billoint,Ogun Turkyilmaz,Hossam Sarhan,Sebastien Thuries,G. Cibrario,Laurent Brunet,F. Deprat,J-E. Michallet,Fabien Clermidy,M. Vinet +15 more
TL;DR: In this article, a general overview of the potential solutions to obtain a high performance low temperature top transistor while keeping bottom MOSFET integrity is presented. And the authors summarize the technological challenges of this concept.
Proceedings ArticleDOI
Monolithic 3D integration: A powerful alternative to classical 2D scaling
M. Vinet,Perrine Batude,Claire Fenouillet-Beranger,Fabien Clermidy,Laurent Brunet,O. Rozeau,JM Hartmannn,O. Billoint,G. Cibrario,Bernard Previtali,Claude Tabone,Benoit Sklenard,Ogun Turkyilmaz,F. Ponthenier,N. Rambal,M.-P. Samson,F. Deprat,V. Lu,L. Pasini,Sebastien Thuries,Hossam Sarhan,J-E. Michallet,O. Faynot +22 more
TL;DR: In this paper, the potential solutions to obtain a high performance low temperature top transistor while keeping bottom MOSFET integrity are discussed. And the opportunities brought by M3DI and highlights the applications benefiting from this small 3D contact pitch.