J
James K. Gillespie
Researcher at Air Force Research Laboratory
Publications - 67
Citations - 1699
James K. Gillespie is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 23, co-authored 67 publications receiving 1504 citations. Previous affiliations of James K. Gillespie include Wright-Patterson Air Force Base.
Papers
More filters
Journal ArticleDOI
Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers
James K. Gillespie,Robert C. Fitch,Neil Moser,T.J. Jenkins,J. Sewell,D. Via,Antonio Crespo,Amir M. Dabiran,Peter Chow,Andrei Osinsky,M.A. Mastro,D. Tsvetkov,V. Soukhoveev,Alexander Usikov,Vladimir A. Dmitriev,B. Luo,Stephen J. Pearton,Fan Ren +17 more
TL;DR: In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) were grown by molecular beam epitaxy (MBE) on 2 in. diameter GaN buffer layers on sapphire substrates.
Proceedings ArticleDOI
Comparative Study of AlGaN/GaN HEMTs on Free-Standing Diamond and Silicon Substrates for Thermal Effects
M. Trejo,Kelson D. Chabak,B. S. Poling,Ryan Gilbert,Antonio Crespo,James K. Gillespie,M. Kossler,Dennis E. Walker,Glen D. Via,Gregg H. Jessen,Daniel Francis,Firooz Faili,Dubravko Babic,Felix Ejeckam +13 more
TL;DR: In this article, the performance results of AlGaN/GaN HEMTs processed on a free-standing chemical vapor deposition (CVD) polycrystalline diamond substrate and a silicon substrate with nominally the same epitaxial algaN/gaN layers both grown by MOCVD were compared for the first time.
Proceedings ArticleDOI
Power performance of thermally-shunted heterojunction bipolar transistors
T. Jenkins,Christopher A. Bozada,Charles Cerny,Gregory C. DeSalvo,Ross W. Dettmer,John L. Ebel,James K. Gillespie,Charles K. Havasy,L. Kehias,K. Nakano,C. Pettiford,Tony Quach,James S. Sewell,D. Via,R. Anholt +14 more
TL;DR: In this article, the effects of layout and thermal shunt configuration on output power, efficiency, and gain of thermally-shunted AlGaAs/GaAs HBT's were investigated.
Journal ArticleDOI
Small signal measurement of Sc2O3 AlGaN/GaN moshemts
B. Luo,R. Mehandru,B. S. Kang,Jihyun Kim,Fan Ren,Brent P. Gila,A. H. Onstine,C. R. Abernathy,Steve Pearton,D. Gotthold,R. Birkhahn,B. Peres,Robert C. Fitch,James K. Gillespie,T.J. Jenkins,J. Sewell,D. Via,Antonio Crespo +17 more
TL;DR: In this article, the performance of 1 × 200 μm2 AlGaN/GaN MOS-HEMTs with Sc2O3 used as both the gate dielectric and as a surface passivation layer is reported.
Proceedings ArticleDOI
Electrical and thermal modeling of AlGaN/GaN HEMTS on diamond silicon substrates
TL;DR: In this paper, the authors modeled an AlGaN/GaN HEMT on a silicon/polydiamond/polycrystalline silicon substrate to predict the self heating aspects of the FETs current and voltage characteristics.