J
Jiancheng Yang
Researcher at University of Florida
Publications - 47
Citations - 3117
Jiancheng Yang is an academic researcher from University of Florida. The author has contributed to research in topics: Schottky diode & Breakdown voltage. The author has an hindex of 19, co-authored 47 publications receiving 1858 citations.
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Journal ArticleDOI
A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI
2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers
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High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
Jiancheng Yang,Shihyun Ahn,Fan Ren,Stephen J. Pearton,Soohwan Jang,Jihyun Kim,Akito Kuramata +6 more
TL;DR: In this paper, Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse currentvoltage characteristics were measured at temperatures in the range of 25-100 °C.
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Radiation damage effects in Ga2O3 materials and devices
Jihyun Kim,Stephen J. Pearton,Chaker Fares,Jiancheng Yang,Fan Ren,Suhyun Kim,Alexander Y. Polyakov +6 more
TL;DR: In this article, the effect of radiation damage on Ga2O3 semiconductors is studied for low-earth orbit of satellites containing these types of devices, including proton, electron, X-ray, gamma ray, and neutron irradiation.
Journal ArticleDOI
High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers
TL;DR: The current density near breakdown was not strongly dependent on contact circumference but did scale with contact area, indicating that the bulk current contribution was dominant.