High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3

TLDR: In this paper, Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse currentvoltage characteristics were measured at temperatures in the range of 25-100 °C.

Abstract: Vertical geometry Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse current-voltage characteristics were measured at temperatures in the range of 25–100 °C. The reverse breakdown voltage (VBR) of these β-Ga2O3 rectifiers without edge termination was a function of the diode diameter, being in the range of 920–1016 V (average value from 25 diodes was 975 ± 40 V, with 10 of the diodes over 1 kV) for diameters of 105 μm and consistently 810 V (810 ± 3 V for 22 diodes) for a diameter of 210 μm. The Schottky barrier height decreased from 1.1 at 25 °C to 0.94 at 100 °C, while the ideality factor increased from 1.08 to 1.28 over the same range. The figure-of-merit (VBR2/Ron), where Ron is the on-state resistance (∼6.7 mΩ cm2), was approximately 154.07 MW·cm−2 for the 105 μm diameter diodes. The reverse recovery time was 26 ns for switching from +5 V to −5 V. These results represent another impressive advanc...