Journal ArticleDOI
A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
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TLDR
The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.Abstract:
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.read more
Citations
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Journal ArticleDOI
Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction.
Daoyou Guo,Yuanli Su,Haoze Shi,Peigang Li,Nie Zhao,Junhao Ye,Shunli Wang,Aiping Liu,Zhengwei Chen,Chaorong Li,Weihua Tang +10 more
TL;DR: This study generates a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga2O3 pn junction that has a high UV/visible rejection ratio, and a fast photoresponse time of 18 ms without bias.
Journal ArticleDOI
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
TL;DR: In this article, the performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors on Ga2O3 has been evaluated and shown to benefit from the larger critical electric field relative to either SiC or GaN.
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Why nitrogen cannot lead to p-type conductivity in ZnO
TL;DR: Based on advanced first-principles calculations, this paper found that nitrogen is actually a deep acceptor, with an exceedingly high ionization energy of 1.3 eV, and hence cannot lead to hole conductivity in ZnO.
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Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors
Chao Xie,Xing-Tong Lu,Xiao-Wei Tong,Zhi-Xiang Zhang,Feng-Xia Liang,Lin Liang,Lin-Bao Luo,Yucheng Wu +7 more
TL;DR: In this article, a comprehensive review of the applications of inorganic ultrawide-bandgap (UWBG) semiconductors for solar-blind DUV light detection in the past several decades is presented.
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Review of gallium-oxide-based solar-blind ultraviolet photodetectors
TL;DR: A comprehensive review of solar-blind photodetectors based on gallium oxide (Ga2O3) materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys is presented in this paper.
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