J
Jing Qi
Researcher at Lanzhou University
Publications - 12
Citations - 340
Jing Qi is an academic researcher from Lanzhou University. The author has contributed to research in topics: Resistive random-access memory & Nanowire. The author has an hindex of 7, co-authored 12 publications receiving 304 citations. Previous affiliations of Jing Qi include University of California, Riverside.
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Journal ArticleDOI
Resistive switching in single epitaxial ZnO nanoislands.
Jing Qi,Jing Qi,Mario Olmedo,Jingjian Ren,Ning Zhan,Jianze Zhao,Jianze Zhao,Jian-Guo Zheng,Jianlin Liu +8 more
TL;DR: The formation and rupture of conducting filaments induced by oxygen vacancy migration are responsible for the resistive switching behaviors of ZnO resistive memories at the nanoscale.
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Multimode Resistive Switching in Single ZnO Nanoisland System
TL;DR: Results show that the threshold-like and self-rectifying types of switching are controlled by the movement of oxygen vacancies in ZnO nanoisland between the C-AFM tip and Si substrate while ordinary bipolar switching is controlled by formation and rupture of conducting nano-filaments.
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Current self-complianced and self-rectifying resistive switching in Ag-electroded single Na-doped ZnO nanowires
TL;DR: Current self-complianced and self-rectifying bipolar resistive switching in an Ag-electroded Na-doped ZnO nanowire device andNa-doping plays important roles in both the self-compliance and self -rectifying properties.
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Magnetic properties of Er-doped ZnO films prepared by reactive magnetron sputtering
Jing Qi,Jing Qi,Daqiang Gao,Jinhong Liu,Wenge Yang,Qi Wang,Jinyuan Zhou,Yinghu Yang,Jianlin Liu +8 more
TL;DR: In this article, a bound-magnetic-polaron model was proposed to explain the ferromagnetic properties of ErZn in ZnO lattices and showed that the estimated magnetic moment per Er ion decreases with the increase of Er concentration.
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Resistive switching in Ga- and Sb-doped ZnO single nanowire devices
Bo Wang,Tianshuang Ren,Si Chen,Bosen Zhang,Rongfang Zhang,Jing Qi,Sheng Chu,Jian Huang,Jianlin Liu +8 more
TL;DR: In this article, self-rectifying resistive switching is demonstrated in Ga-doped ZnO single nanowire devices; the current is not only selfrectifying but also self-compliance for Sb-Doped single nanometre devices.