Journal ArticleDOI
Resistive switching in Ga- and Sb-doped ZnO single nanowire devices
Bo Wang,Tianshuang Ren,Si Chen,Bosen Zhang,Rongfang Zhang,Jing Qi,Sheng Chu,Jian Huang,Jianlin Liu +8 more
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In this article, self-rectifying resistive switching is demonstrated in Ga-doped ZnO single nanowire devices; the current is not only selfrectifying but also self-compliance for Sb-Doped single nanometre devices.Abstract:
Resistive random access memory (RRAM) is one of the most promising nonvolatile memory technologies because of its high potential to replace traditional charge-based memory, which is approaching its scaling limit. To fully realize the potential of the RRAM, it can be important to develop a unique device with current self-rectification, which provides a solution to suppress sneak current in crossbar arrays, and self-compliance, which eliminates the current limiter. In this paper, self-rectifying resistive switching is demonstrated in Ga-doped ZnO single nanowire devices; the current is not only self-rectifying but also self-compliance for Sb-doped single nanowire devices. Multilevel resistive switching has also been achieved for Sb-doped ZnO single nanowire devices by using different SET voltages. Furthermore, the doping of Ga and Sb narrows the switching voltage distribution greatly.read more
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Status and Prospects of ZnO-Based Resistive Switching Memory Devices
TL;DR: This review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO and covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices.
Journal ArticleDOI
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.
Yu Li,Yu Li,Shibing Long,Shibing Long,Qi Liu,Qi Liu,Hangbing Lv,Hangbing Lv,Ming Liu,Ming Liu +9 more
TL;DR: Two-dimensional nanomaterials with excellent properties including and beyond graphene, are discussed with emphasis on performance improvement by their active roles as the switching layer, insertion layer, thin electrode, patterned electrode, and edge electrode.
Journal ArticleDOI
Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
Gianluca Milano,Michael Luebben,Zheng Ma,Rafal E. Dunin-Borkowski,Luca Boarino,Candido Pirri,Candido Pirri,Rainer Waser,Rainer Waser,Carlo Ricciardi,Ilia Valov +10 more
TL;DR: This work reports for the first time a single crystalline nanowire based model system capable of combining all memristive functions – non-volatile bipolar memory, multilevel switching, selector and synaptic operations imitating Ca2+ dynamics of biological synapses.
References
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Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
Journal ArticleDOI
Thermal transport measurements of individual multiwalled nanotubes.
TL;DR: The thermal conductivity and thermoelectric power of a single carbon nanotube were measured using a microfabricated suspended device and shows linear temperature dependence with a value of 80 microV/K at room temperature.
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Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon,Kyung-min Kim,Jae Hyuck Jang,Jong Myeong Jeon,Min Hwan Lee,Gun Hwan Kim,Xiang-Shu Li,Gyeong-Su Park,Bora Lee,Seungwu Han,Miyoung Kim,Cheol Seong Hwang +11 more
TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
Journal ArticleDOI
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
TL;DR: A comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) can be found in this article, where a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMS over the past decade.