N
Noah Zamdmer
Researcher at IBM
Publications - 58
Citations - 2157
Noah Zamdmer is an academic researcher from IBM. The author has contributed to research in topics: CMOS & Voltage-controlled oscillator. The author has an hindex of 25, co-authored 57 publications receiving 2103 citations.
Papers
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Journal ArticleDOI
Frequency-independent equivalent-circuit model for on-chip spiral inductors
Yu Cao,Robert A. Groves,Xuejue Huang,Noah Zamdmer,Jean-Olivier Plouchart,R.A. Wachnik,Tsu-Jae King,Chenming Hu +7 more
TL;DR: In this article, a wideband physical and scalable 2-spl Pi/ equivalent circuit model for on-chip spiral inductors is developed based on physical derivation and circuit theory, closed-form formulas are generated to calculate the RLC circuit elements directly from the inductor layout.
Journal ArticleDOI
Design of wide-band CMOS VCO for multiband wireless LAN applications
N. Fong,Jean-Olivier Plouchart,Noah Zamdmer,Duixian Liu,Lawrence F. Wagner,Calvin Plett,N.G. Tarr +6 more
TL;DR: In this paper, a general design methodology of low-voltage wideband voltage-controlled oscillator (VCO) suitable for wireless LAN (WLAN) application is described, and the applications of high-quality passives for the resonator are introduced: a single-loop horseshoe inductor with Q > 20 between 2 and 5 GHz for good phase noise performance; and accumulation MOS (AMOS) varactors with C/sub max/C/sub min/ ratio of 6 to provide wide-band tuning capability at lowvoltage supply.
Proceedings ArticleDOI
Record RF performance of 45-nm SOI CMOS Technology
Sungjae Lee,Basanth Jagannathan,Shreesh Narasimha,Anthony I. Chou,Noah Zamdmer,J. Johnson,Richard Q. Williams,Lawrence F. Wagner,Jonghae Kim,Jean-Olivier Plouchart,John J. Pekarik,Scott K. Springer,Gregory G. Freeman +12 more
TL;DR: In this article, the authors report record RF performance in 45-nm silicon-on-insulator (SOI) CMOS technology and demonstrate that RF performance scaling with channel length and layout optimization is demonstrated.
Proceedings ArticleDOI
High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization
C-H. Lin,Brian J. Greene,Shreesh Narasimha,J. Cai,A. Bryant,Carl J. Radens,Vijay Narayanan,Barry Linder,Herbert L. Ho,A. Aiyar,E. Alptekin,J-J. An,Michael V. Aquilino,Ruqiang Bao,V. Basker,Nicolas Breil,MaryJane Brodsky,William Y. Chang,Clevenger Leigh Anne H,Dureseti Chidambarrao,Cathryn Christiansen,D. Conklin,C. DeWan,H. Dong,L. Economikos,Bernard A. Engel,Sunfei Fang,D. Ferrer,A. Friedman,Allen H. Gabor,Fernando Guarin,Ximeng Guan,M. Hasanuzzaman,J. Hong,D. Hoyos,Basanth Jagannathan,S. Jain,S.-J. Jeng,J. Johnson,B. Kannan,Y. Ke,Babar A. Khan,Byeong Y. Kim,Siyuranga O. Koswatta,Amit Kumar,T. Kwon,Unoh Kwon,L. Lanzerotti,H-K Lee,W-H. Lee,A. Levesque,Wai-kin Li,Zhengwen Li,Wei Liu,S. Mahajan,Kevin McStay,Hasan M. Nayfeh,W. Nicoll,G. Northrop,A. Ogino,Chengwen Pei,S. Polvino,Ravikumar Ramachandran,Z. Ren,Robert R. Robison,Saraf Iqbal Rashid,Viraj Y. Sardesai,S. Saudari,Dominic J. Schepis,Christopher D. Sheraw,Shariq Siddiqui,Liyang Song,Kenneth J. Stein,C. Tran,Henry K. Utomo,Reinaldo A. Vega,Geng Wang,Han Wang,W. Wang,X. Wang,D. Wehelle-Gamage,E. Woodard,Yongan Xu,Y. Yang,N. Zhan,Kai Zhao,C. Zhu,K. Boyd,E. Engbrecht,K. Henson,E. Kaste,Siddarth A. Krishnan,Edward P. Maciejewski,Huiling Shang,Noah Zamdmer,R. Divakaruni,J. Rice,Scott R. Stiffler,Paul D. Agnello +98 more
TL;DR: In this article, the authors present a fully integrated 14nm CMOS technology featuring fin-FET architecture on an SOI substrate for a diverse set of SoC applications including HP server microprocessors and LP ASICs.
Journal ArticleDOI
A 1-V 3.8 - 5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology
N. Fong,Jean-Olivier Plouchart,Noah Zamdmer,Duixian Liu,Lawrence F. Wagner,Calvin Plett,N.G. Tarr +6 more
TL;DR: In this article, a 1-V 3.8 - 5.7 GHz wideband voltage-controlled oscillator (VCO) in a 0.13/spl mu/m silicon-on-insulator (SOI) CMOS process is presented.