J
John L. Freeouf
Researcher at IBM
Publications - 100
Citations - 4081
John L. Freeouf is an academic researcher from IBM. The author has contributed to research in topics: Schottky barrier & Band gap. The author has an hindex of 32, co-authored 100 publications receiving 4003 citations. Previous affiliations of John L. Freeouf include Oregon Health & Science University & Portland State University.
Papers
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Journal ArticleDOI
Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
A. C. Warren,Jerry M. Woodall,John L. Freeouf,Daniel R. Grischkowsky,D. T. McInturff,Michael R. Melloch,Nobuo Otsuka +6 more
TL;DR: Arsenic precipitates have been observed in GaAs low-temperature buffer layers (LTBLs) used as "substrates" for normal molecular beam epitaxy growth as mentioned in this paper.
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Schottky barriers: An effective work function model
John L. Freeouf,Jerry M. Woodall +1 more
TL;DR: In this paper, a new model of Fermi-level pinning at the interfaces of compound semiconductor substrates and metallic or oxide overlayers was proposed, which assumes the standard Schottky picture of interface band alignment, but the interface phases involved are not the pure metal or oxide normally assumed by other models.
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Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry
Seung Gu Lim,Stas Kriventsov,Thomas N. Jackson,J. H. Haeni,Darrell G. Schlom,A.M. Balbashov,Reinhard Uecker,P. Reiche,John L. Freeouf,Gerald Lucovsky +9 more
TL;DR: In this paper, a far ultraviolet (UV) spectroscopic ellipsometer system working up to 9 eV has been developed, and applied to characterize high-K-dielectric materials.
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Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
TL;DR: In this paper, a GaAs buffer layer was grown at low substrate temperatures (250 °C) and the film structures were examined using transmission electron microscopy, showing that the GaAs layer was free of defects or clusters.
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Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy
TL;DR: In this paper, an epitaxial layer of n−Ga1−xInxAs grown by molecular beam epitaxy on n•GaAs which is graded in composition from x = 0 at the GaAs interface to 0.8?x?1.0 at the surface will produce a structure with a nearly zero Schottky barrier height for the metal-Ga 1−xAs interface and hence a low resistance ohmic contact.