Y
Yong Liang
Researcher at Motorola
Publications - 36
Citations - 958
Yong Liang is an academic researcher from Motorola. The author has contributed to research in topics: Epitaxy & Thin film. The author has an hindex of 14, co-authored 36 publications receiving 921 citations. Previous affiliations of Yong Liang include Battelle Memorial Institute & Freescale Semiconductor.
Papers
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Journal ArticleDOI
Contributions to the effective work function of platinum on hafnium dioxide
J. Schaeffer,L. R. C. Fonseca,Srikanth B. Samavedam,Yong Liang,Philip J. Tobin,Bruce E. White +5 more
TL;DR: In this article, the intrinsic and extrinsic contributions to Fermi level pinning of platinum (Pt) electrodes on hafnium dioxide (HfO2) gate dielectrics are investigated by examining the impact of oxygen and forming gas anneals on the effective work function of Pt-Hf O2-silicon capacitors.
Journal ArticleDOI
Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline SrTiO3 films
Yi Wei,Xiaoming Hu,Yong Liang,Dirk Jordan,B. Craigo,Ravi Droopad,Zhiyi Jimmy Yu,Alexander A. Demkov,John L. Edwards,William J. Ooms +9 more
TL;DR: In this paper, a method for removing SiO2 and producing an ordered Si(100) surface using Sr or SrO has been developed, which is well suited for the growth of crystalline high-k dielectric SrTiO3 films.
Journal ArticleDOI
The interface of epitaxial SrTiO3 on silicon: in situ and ex situ studies
Xiaoming Hu,H. Li,Yong Liang,Yi Wei,Zhiyi Jimmy Yu,Daniel S. Marshall,John L. Edwards,Ravindranath Droopad,Xiaodong Zhang,Alexander A. Demkov,K. Moore,J. Kulik +11 more
TL;DR: In this article, the formation of interfacial layers between silicon and the overgrown epitaxial SrTiO3 as a function of the growth temperature has been studied in detail using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy.
Proceedings ArticleDOI
Challenges for the integration of metal gate electrodes
James K. Schaeffer,C. Capasso,L. R. C. Fonseca,S. Samavedam,David C. Gilmer,Yong Liang,S. Kalpat,B. Adetutu,Hsing-Huang Tseng,Y. Shiho,Alexander A. Demkov,Rama I. Hegde,W.J. Taylor,Rich Gregory,J. Jiang,E. Luckowski,M. Raymond,K. Moore,Dina H. Triyoso,D. Roan,B. E. White,Philip J. Tobin +21 more
TL;DR: In this article, the integration challenges for metal gate electrodes including the presence of Fermi level pinning and the impact of interface chemistry on the effective metal work function are discussed.
Journal ArticleDOI
Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy
TL;DR: In this paper, a single-crystal perovskite (STiO3) on GaAs(001) was achieved using molecular beam epitaxy, and the growth was accomplished by deposition of a submonolayer of titanium on GaA(001), followed by the co-deposition of strontium and titanium initiated at a low-temperature, lowoxygen-pressure condition.