K
Kenneth P. Rodbell
Researcher at IBM
Publications - 222
Citations - 5751
Kenneth P. Rodbell is an academic researcher from IBM. The author has contributed to research in topics: Electromigration & Texture (crystalline). The author has an hindex of 35, co-authored 221 publications receiving 5475 citations. Previous affiliations of Kenneth P. Rodbell include Analytical Services & GlobalFoundries.
Papers
More filters
Journal ArticleDOI
Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground
TL;DR: In this paper, ground-based measurements of the cosmic-ray induced neutron flux and its energy distribution have been made at several locations across the United States using an extended energy Bonner sphere spectrometer.
Journal ArticleDOI
Copper Metallization for High Performance Silicon Technology
TL;DR: In this article, the authors describe the development of an electroplating process for the copper network, dual-damascence chem-mech polishing (CMP), and effective liner material for copper diffusion barrier and adhesion promotion.
Journal ArticleDOI
Mechanisms for microstructure evolution in electroplated copper thin films near room temperature
James Mckell Edwin Harper,C. Cabral,Panayotis C. Andricacos,Lynne Gignac,Ismail C. Noyan,Kenneth P. Rodbell,Chao-Kun Hu +6 more
TL;DR: In this paper, a model based on grain boundary energy in the fine-grained as-deposited films providing the underlying energy density which drives abnormal grain growth is presented.
Patent
Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
Jeffrey William Carr,Lawrence Daniel David,William Leslie Guthrie,Frank B. Kaufman,William John Patrick,Kenneth P. Rodbell,Robert W. Pasco,Anton Nenadic +7 more
TL;DR: In this article, a method of chem-mech polishing an article, preferably an electronic component substrate, is described. And the method includes the following steps; obtaining an article having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the article with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles.
Journal ArticleDOI
Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells
TL;DR: In this article, experimental data showed that low energy (<2 MeV) proton irradiation can upset exploratory 65 nm node, silicon-on-insulator circuits and suggested that track structures need to be understood and effectively modeled, especially for small, modern devices.