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Kenneth P. Rodbell

Researcher at IBM

Publications -  222
Citations -  5751

Kenneth P. Rodbell is an academic researcher from IBM. The author has contributed to research in topics: Electromigration & Texture (crystalline). The author has an hindex of 35, co-authored 221 publications receiving 5475 citations. Previous affiliations of Kenneth P. Rodbell include Analytical Services & GlobalFoundries.

Papers
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Journal ArticleDOI

Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground

TL;DR: In this paper, ground-based measurements of the cosmic-ray induced neutron flux and its energy distribution have been made at several locations across the United States using an extended energy Bonner sphere spectrometer.
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Copper Metallization for High Performance Silicon Technology

TL;DR: In this article, the authors describe the development of an electroplating process for the copper network, dual-damascence chem-mech polishing (CMP), and effective liner material for copper diffusion barrier and adhesion promotion.
Journal ArticleDOI

Mechanisms for microstructure evolution in electroplated copper thin films near room temperature

TL;DR: In this paper, a model based on grain boundary energy in the fine-grained as-deposited films providing the underlying energy density which drives abnormal grain growth is presented.
Patent

Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor

TL;DR: In this article, a method of chem-mech polishing an article, preferably an electronic component substrate, is described. And the method includes the following steps; obtaining an article having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the article with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles.
Journal ArticleDOI

Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

TL;DR: In this article, experimental data showed that low energy (<2 MeV) proton irradiation can upset exploratory 65 nm node, silicon-on-insulator circuits and suggested that track structures need to be understood and effectively modeled, especially for small, modern devices.