L
L. Carbonell
Researcher at Katholieke Universiteit Leuven
Publications - 36
Citations - 789
L. Carbonell is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Dielectric & Copper interconnect. The author has an hindex of 14, co-authored 36 publications receiving 755 citations.
Papers
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Proceedings ArticleDOI
3D integration by Cu-Cu thermo-compression bonding of extremely thinned bulk-Si die containing 10 μm pitch through-Si vias
Bart Swinnen,Wouter Ruythooren,P. De Moor,L. Bogaerts,L. Carbonell,K. De Munck,B. Eyckens,Serguei Stoukatch,D. Sabuncuoglu Tezcan,Zsolt Tokei,Jan Vaes,J. Van Aelst,Eric Beyne +12 more
TL;DR: Using standard single damascene type techniques on bulk-Si, combined on one hand with extreme wafer thinning and on the other with Cu-Cu thermo-compression bonding technology, the authors demonstrate yielding 10k through-wafer 3D-via chains with a via pitch of 10μm for a via diameter of 5μm.
Journal ArticleDOI
Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination
Silvia Lenci,Brice De Jaeger,L. Carbonell,Jie Hu,Geert Mannaert,Dirk Wellekens,Shuzhen You,Benoit Bakeroot,Stefaan Decoutere +8 more
TL;DR: In this paper, high-performance AlGaN/GaN diodes are realized on 8-in Si wafers with Au-free CMOS compatible technology with only one extra lithographic step.
Journal ArticleDOI
Corrosion inhibition by self-assembled monolayers for enhanced wire bonding on Cu surfaces
TL;DR: In this paper, the formation of thiolate species bonded to a mixed metallic Cu and cuprous oxide surface was investigated and the feasibility of exploiting self-assembled monolayers (SAMs) in microelectronics applications was demonstrated by the enhancement of Cu wire bonding onto Cu bond pads.
Journal ArticleDOI
Influence of absorbed water components on SiOCH low-k reliability
Yunlong Li,Ivan Ciofi,L. Carbonell,Nancy Heylen,Joke Van Aelst,Mikhail R. Baklanov,Guido Groeseneken,Karen Maex,Zsolt Tőkei +8 more
TL;DR: In this paper, thermal desorption spectroscopy (TDS) was used to investigate the influence of absorbed water components on the low-k dielectric reliability of SiOCH.
Proceedings ArticleDOI
Post patterning meso porosity creation: a potential solution for pore sealing
Rudy Caluwaerts,M. Van Hove,Gerald Beyer,Romano Hoofman,Herbert Struyf,G.J.A.M. Verheyden,Joost Waeterloos,Zsolt Tokei,Francesca Iacopi,L. Carbonell,Quoc Toan Le,A. Das,I. Vos,Steven Demuynck,Karen Maex +14 more
TL;DR: In this paper, the creation of meso porosity in single damascene structures after patterning has been investigated to facilitate the sealing of the sidewalls by iPVD barriers.