I
Ivan Ciofi
Researcher at Katholieke Universiteit Leuven
Publications - 89
Citations - 1294
Ivan Ciofi is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Dielectric & Copper interconnect. The author has an hindex of 16, co-authored 75 publications receiving 1008 citations. Previous affiliations of Ivan Ciofi include IMEC.
Papers
More filters
Proceedings ArticleDOI
Manufacturability issues with double patterning for 50-nm half-pitch single damascene applications using RELACS shrink and corresponding OPC
Maaike Op de Beeck,Janko Versluijs,Vincent Wiaux,Tom Vandeweyer,Ivan Ciofi,Herbert Struyf,Dirk Hendrickx,Jan Van Olmen +7 more
TL;DR: In this paper, a double patterning (DP) process is discussed for 50nm half pitch interconnects, using a litho-etch-lithoetch approach on metal hard mask (MHM).
Journal ArticleDOI
Influence of absorbed water components on SiOCH low-k reliability
Yunlong Li,Ivan Ciofi,L. Carbonell,Nancy Heylen,Joke Van Aelst,Mikhail R. Baklanov,Guido Groeseneken,Karen Maex,Zsolt Tőkei +8 more
TL;DR: In this paper, thermal desorption spectroscopy (TDS) was used to investigate the influence of absorbed water components on the low-k dielectric reliability of SiOCH.
Journal ArticleDOI
Impact of Wire Geometry on Interconnect RC and Circuit Delay
Ivan Ciofi,Antonino Contino,Philippe Roussel,Rogier Baert,Victor-H. Vega-Gonzalez,Kristof Croes,Mustafa Badaroglu,Christopher J. Wilson,Praveen Raghavan,Abdelkarim Mercha,Diederik Verkest,Guido Groeseneken,Dan Mocuta,Aaron Thean +13 more
TL;DR: For a given pitch and dielectric stack height, the RC delay can be significantly reduced by targeting wider and deeper damascene trenches, that is, by trading capacitance for resistance, and that an optimal wire geometry for RC delay minimization exists.
Journal ArticleDOI
Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper.
Liang Gong Wen,Philippe Roussel,Olalla Varela Pedreira,B. Briggs,Benjamin Groven,Shibesh Dutta,Mihaela Popovici,Nancy Heylen,Ivan Ciofi,Kris Vanstreels,Frederik Westergaard Østerberg,Ole Hansen,Dirch Hjorth Petersen,Karl Opsomer,Christophe Detavernie,Christopher J. Wilson,Sven Van Elshocht,Kristof Croes,Jürgen Bömmels,Zsolt Tőkei,Christoph Adelmann +20 more
TL;DR: The void-free filling in sub-10 nm wide single damascene lines using an ALD process in combination with 2.5 Å of ALD TiN interface and postdeposition annealing shows that ruthenium can be used as a barrierless metallization in interconnects.
Journal ArticleDOI
Ultra-low-k cyclic carbon-bridged PMO films with a high chemical resistance
Frederik Goethals,Ivan Ciofi,Oreste Madia,Kris Vanstreels,Mikhail R. Baklanov,Christophe Detavernier,Pascal Van Der Voort,Isabel Van Driessche +7 more
TL;DR: In this article, the authors presented a series of PMO thin films that combine an ultra-low-k value, a hydrophobic property and a high resistance against aggressive chemical conditions.