L
L. L. Lev
Researcher at Paul Scherrer Institute
Publications - 24
Citations - 392
L. L. Lev is an academic researcher from Paul Scherrer Institute. The author has contributed to research in topics: Angle-resolved photoemission spectroscopy & Fermi surface. The author has an hindex of 12, co-authored 18 publications receiving 312 citations. Previous affiliations of L. L. Lev include Kurchatov Institute & Moscow Institute of Physics and Technology.
Papers
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Journal ArticleDOI
Large positive linear magnetoresistance in the two-dimensional t 2g electron gas at the EuO/SrTiO3 interface
Kristy J. Kormondy,Lingyuan Gao,Xiang Li,Sirong Lu,Agham Posadas,Shida Shen,Maxim Tsoi,Martha R. McCartney,David J. Smith,Jianshi Zhou,L. L. Lev,Marius-Adrian Husanu,Vladimir N. Strocov,Alexander A. Demkov +13 more
TL;DR: This system offers an as-yet-unexplored route to pursue proximity-induced effects in the oxide two-dimensional t2g electron gas.
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Soft-X-ray ARPES at the Swiss Light Source: From 3D Materials to Buried Interfaces and Impurities
Vladimir N. Strocov,Masaki Kobayashi,Xiaoqiang Wang,L. L. Lev,J. Krempasky,Victor V. Rogalev,Thorsten Schmitt,Claudia Cancellieri,M. L. Reinle-Schmitt +8 more
TL;DR: In this article, the authors report on the recent instrumental progress at the Swiss Light Source (SLS), where a new soft-X-ray ARPES facility was in operation.
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Fermi Surface of Three-Dimensional La(1-x)Sr(x)MnO3 Explored by Soft-X-Ray ARPES: Rhombohedral Lattice Distortion and its Effect on Magnetoresistance.
L. L. Lev,L. L. Lev,J. Krempaský,Urs Staub,V. A. Rogalev,Thorsten Schmitt,Ming Shi,Peter Blaha,Andrey S. Mishchenko,A.A. Veligzhanin,Yan V. Zubavichus,M. B. Tsetlin,Henrieta Volfová,Jürgen Braun,Jan Minár,Jan Minár,Vladimir N. Strocov +16 more
TL;DR: The experimental Fermi surface unveils the canonical topology of alternating three-dimensional electron spheres and hole cubes, with their shadow contours manifesting the rhombohedral lattice distortion, which affects the double-exchange electron hopping and thus the colossal magnetoresistance effect.
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Band structure of the EuO/Si interface: justification for silicon spintronics
L. L. Lev,L. L. Lev,Dmitry V. Averyanov,Andrey M. Tokmachev,Federico Bisti,V. A. Rogalev,Vladimir N. Strocov,Vyacheslav G. Storchak +7 more
TL;DR: In this paper, the authors employed a soft-X-ray ARPES technique, using synchrotron radiation with photon energies around 1 keV, to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity.
Journal ArticleDOI
k -space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
L. L. Lev,I. O. Maiboroda,M.-A. Husanu,E. S. Grichuk,N. K. Chumakov,I. S. Ezubchenko,I. A. Chernykh,X. Wang,B. Tobler,Thorsten Schmitt,M. L. Zanaveskin,V. G. Valeyev,Vladimir N. Strocov +12 more
TL;DR: The authors probe the electronic structure in GaN/AlGaN, heterostructures, discovering planar anisotropy of the electron Fermi surface, offering new insights into transport properties.