L
Livio Lattanzio
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 28
Citations - 743
Livio Lattanzio is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Field-effect transistor & Transistor. The author has an hindex of 14, co-authored 28 publications receiving 657 citations. Previous affiliations of Livio Lattanzio include École Normale Supérieure.
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Journal ArticleDOI
Complementary Germanium Electron–Hole Bilayer Tunnel FET for Sub-0.5-V Operation
TL;DR: In this paper, the germanium electron-hole (EH) bilayer tunnel field effect transistor (TFL) was proposed to provide a quasi-ideal alignment between the tunneling path and the electric field controlled by the gate.
Journal ArticleDOI
Understanding the Superlinear Onset of Tunnel-FET Output Characteristic
TL;DR: In this paper, the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected current.
Journal ArticleDOI
The electron–hole bilayer tunnel FET
TL;DR: In this article, a novel tunnel field effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET), which exploits the carrier tunneling through a bias-induced electron hole bilayer in order to achieve improved switching and higher drive currents, was proposed.
Proceedings ArticleDOI
Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current
TL;DR: The electron-hole bilayer TFET (EHBTFET) as discussed by the authors exploits the carrier tunneling through a bias-induced electron hole bilayer in order to achieve improved switching and higher drive currents when compared to a lateral p-i-n junction TFET.
Journal ArticleDOI
Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?
TL;DR: In this article, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution, and the reason for the degraded subthreshold swing, which is typical of devices with highly doped source, is explained.