M
M. Verdú
Researcher at Canadian International Development Agency
Publications - 22
Citations - 425
M. Verdú is an academic researcher from Canadian International Development Agency. The author has contributed to research in topics: Lead selenide & Infrared detector. The author has an hindex of 11, co-authored 22 publications receiving 383 citations.
Papers
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Journal ArticleDOI
Role of halogens in the mechanism of sensitization of uncooled PbSe infrared photodetectors
M. C. Torquemada,M. T. Rodrigo,G. Vergara,F. J. Sánchez,R. Almazán,M. Verdú,P. Rodriguez,V. Villamayor,L. J. Gómez,M. T. Montojo,Ángel Muñoz +10 more
TL;DR: In this article, a thermal treatment for photodetectors with lead selenide layers is described, which consists of two different stages: the first step in an iodine and oxygen rich atmosphere at 220°C, and the second one at a higher temperature (450°C) on air.
Journal ArticleDOI
Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N
Eva Monroy,Fernando Calle,Rocío Ranchal,Tomas Palacios,M. Verdú,F. J. Sánchez,M T Montojo,Martin Eickhoff,F. Omnès,Zahia Bougrioua,Ingrid Moerman +10 more
TL;DR: In this paper, an intermediate thin Ti layer is shown to enhance the thermal stability of Pt/Au, and leads to an increase of the Schottky barrier height, achieving a barrier height of 1.18 ± 0.07 eV.
Journal ArticleDOI
Polycrystalline lead selenide: the resurgence of an old infrared detector
G. Vergara,M. T. Montojo,M. C. Torquemada,M. T. Rodrigo,F. J. Sánchez,L. J. Gómez,R. Almazán,M. Verdú,P. Rodriguez,V. Villamayor,M. Álvarez,J. Diezhandino,J. Plaza,I. Catalán +13 more
TL;DR: In this paper, an innovative method for processing detectors, based on a vapour phase deposition (VPD) technique, has allowed manufacturing the first 2D array of polycrystalline PbSe with good electro optical characteristics.
Journal ArticleDOI
Reactive ion etching of GaN layers using
TL;DR: In this paper, the characteristics of reactive ion etching of gallium nitride layers, using etching gas, were investigated, and the GaN etch rate was examined by varying the bias voltage and the flow rate of.
Journal ArticleDOI
Monolithic integration of spectrally selective uncooled lead selenide detectors for low cost applications
J. Diezhandino,G. Vergara,G. Pérez,I. Génova,M. T. Rodrigo,F. J. Sánchez,M. C. Torquemada,V. Villamayor,J. Plaza,I. Catalán,R. Almazán,M. Verdú,P. Rodriguez,L. J. Gómez,M. T. Montojo +14 more
TL;DR: In this article, an uncooled infrared detector with its natural spectral response modified as design is reported. But this detector is based on thermal deposition of a thin PbSe layer followed by a specific thermal treatment in an iodine-rich atmosphere.