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Maurizio Moschetti

Researcher at STMicroelectronics

Publications -  10
Citations -  78

Maurizio Moschetti is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Electrode & Layer (electronics). The author has an hindex of 3, co-authored 7 publications receiving 38 citations.

Papers
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Journal ArticleDOI

SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications.

TL;DR: The main features of silicon carbide as a material and its potential application in the field of particles and photons detectors are discussed, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance are discussed.
Journal ArticleDOI

Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs

TL;DR: In this article, the authors proposed a quantitative explanation for this behavior, attributing it to the charging/discharging dynamics of carbon (C)-related buffer traps, which is supported by calibrated 2-D numerical simulations.
Journal ArticleDOI

A high stability and uniformity W micro hot plate

TL;DR: In this paper, a tungsten multi-rings resistor embedded in a dielectric membrane has been used to monitor the temperature uniformity of the hot region, where distributed contacts have been integrated on it to be used as sense terminals and to extrapolate the single ring temperature.
Patent

Sensor of volatile substances and process for manufacturing a sensor of volatile substances

TL;DR: A sensor of volatile substances includes: a first electrode structure and a second electrode structure capacitively coupled, comb-fingered and arranged coplanar in a plane; and a sensitive layer, of a sensitive material that is permeable to a volatile substance and has electrical permittivity depending upon a concentration of the volatile substance absorbed by the sensitive material as discussed by the authors.

Symmetrical VTH/RON Drifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs

TL;DR: In this article , the drift of threshold voltage and on-resistance transients in p-GaN power HEMTs after being submitted to negative/positive gate stress was investigated.