N
Nicolo Zagni
Researcher at University of Modena and Reggio Emilia
Publications - 41
Citations - 541
Nicolo Zagni is an academic researcher from University of Modena and Reggio Emilia. The author has contributed to research in topics: Threshold voltage & Random dopant fluctuation. The author has an hindex of 9, co-authored 34 publications receiving 181 citations. Previous affiliations of Nicolo Zagni include Purdue University.
Papers
More filters
Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
Journal ArticleDOI
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
Seongin Hong,Nicolo Zagni,Sooho Choo,Na Liu,Seungho Baek,Arindam Bala,Hocheon Yoo,Byung Ha Kang,Hyun Jae Kim,Hyung-Joong Yun,Muhammad A. Alam,Sunkook Kim +11 more
TL;DR: In this article, a bilayer MoS2 phototransistor was used to synthesize an active pixel image sensor array for image sensing applications, which is composed of two-dimensional transition metal dichalcogenides (MoS2).
Journal ArticleDOI
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design
TL;DR: A simple yet effective physics-based compact model of RTN valid in both states, which can be steadily integrated in state-of-the-art RRAM compact models is developed.
Journal ArticleDOI
“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
Nicolo Zagni,Alessandro Chini,Francesco Maria Puglisi,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni,Paolo Pavan,Giovanni Verzellesi +7 more
TL;DR: In this paper, the authors show that the RON increase and decrease during stress and recovery experiments in carbon-doped AlGaN/GaN power metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs).
Journal ArticleDOI
Halide perovskite high-k field-effect transistors with dynamically reconfigurable ambipolarity
Noelia Devesa Canicoba,Nicolo Zagni,Fangze Liu,Gary McCuistian,Kasun Fernando,Hugo Bellezza,Boubacar Traoré,Régis Rogel,Hsinhan Tsai,Laurent Le Brizoual,Wanyi Nie,Jared Crochet,Sergei Tretiak,Claudine Katan,Jacky Even,Mercouri G. Kanatzidis,Bruce W. Alphenaar,Jean-Christophe Blancon,Muhammad Ashraf Alam,Aditya D. Mohite +19 more
TL;DR: In this paper, the authors report halide perovskite-based FET operation at room temperature with negligible hysteresis and demonstrate that incorporating high-k dielectrics enables modulation of the channel conductance.