J. Heydenreich

TL;DR: In this article, a low threshold, large T/sub o/ injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated, which are formed due to a morphological transformation of a pseudomorphic In/sub 0.5/Ga/sub0.5 /As layer.

TL;DR: Thanarrow ultranarrow cathodoluminescence lines originating from single InAs quantum dots in a GaAs matrix for temperatures up to 50 K are reported, directly proving their $\ensuremath{\delta}$-function-like density of electronic states.

TL;DR: In this paper, a laterally ordered array of nanoscale structures inserted in a GaAs matrix, where each structure is composed of several vertically merging InAs parts, was found to decrease the radiative lifetime and to result in low energy shifts of the corresponding peaks in luminescence and absorption spectra.

TL;DR: In this paper, a GaSb quantum dot with a staggered band lineup (type II) is formed in a GaAs matrix using molecular beam epitaxy, where the dots are growing in a self-organized way on a GaAS(100) surface.

TL;DR: In this paper, a self-organization of vertically-coupled quantum dots (VECODs) arranged in a well ordered artificial three-dimensional tefragonal lattice is described.